Abstract: A semiconductor system may include: an external channel including a CA (Command/Address) channel, and first and second data channels; and first and second semiconductor chips, which are coupled in common to the CA channel and coupled to respective different ones of the first and second data channels, and each of which includes a coupling information pad. A first value may be inputted to the coupling information pad of one of the first and second semiconductor chips that is coupled to the first data channel, and a second value may be inputted to the coupling information pad of the other semiconductor chip that is coupled to the second data channel. Each of the first and second semiconductor chips selectively stores setting information using CA information applied to the CA channel and a value inputted to the corresponding coupling information pad.

Abstract: A semiconductor system may include: an external channel including a CA (Command/Address) channel, and first and second data channels; and first and second semiconductor chips, which are coupled in common to the CA channel and coupled to respective different ones of the first and second data channels, and each of which includes a coupling information pad. A first value may be inputted to the coupling information pad of one of the first and second semiconductor chips that is coupled to the first data channel, and a second value may be inputted to the coupling information pad of the other semiconductor chip that is coupled to the second data channel. Each of the first and second semiconductor chips selectively stores setting information using CA information applied to the CA channel and a value inputted to the corresponding coupling information pad.

Abstract: A burst length control circuit includes a burst length input circuit that outputs a mode register burst length signal and a burst length on-the-fly signal, a burst length generator circuit that outputs a burst length signal, and a burst length adjuster that delays the burst length signal by a write latency time to produce a write burst length control signal. A selection circuit selects any one of the burst length signal and the write burst length control signal according to a write read command signal and an on-the-fly signal received from the burst length input circuit, and outputs a burst length control signal. A burst stop counter counts the burst length control signal according to an internal write command signal and an internal read command signal, and outputs a burst stop signal corresponding to a selected burst length.

Abstract: A burst length control circuit includes a burst length input circuit that outputs a mode register burst length signal and a burst length on-the-fly signal, a burst length generator circuit that outputs a burst length signal, and a burst length adjuster that delays the burst length signal by a write latency time to produce a write burst length control signal. A selection circuit selects any one of the burst length signal and the write burst length control signal according to a write read command signal and an on-the-fly signal received from the burst length input circuit, and outputs a burst length control signal. A burst stop counter counts the burst length control signal according to an internal write command signal and an internal read command signal, and outputs a burst stop signal corresponding to a selected burst length.

Abstract: Provided is a device and method for controlling self-refresh which reduces current when a semiconductor device stays in a self-refresh operation. The device for controlling self-refresh includes a bulk voltage controller configured to combine an idle signal indicating an active termination state of a bank and a self-refresh signal so as to generate a control signal for controlling a bulk voltage, a bulk voltage driver configured to vary a level of the bulk voltage in response to the control signal, and output the bulk voltage with a different level, and a refresh controller configured to output the self-refresh active signal upon receiving the bulk voltage as a bulk bias voltage.

Abstract: A semiconductor device includes a command decoder configured to decode a command and generate a composite command; a first generation block configured to generate a first control signal for performing a first operation based on the composite command; a delay control block configured to delay the composite command by a predetermined time and output a delayed composite command; and a second generation block configured to generate a second control signal for performing a second operation based on the delayed composite command.

Abstract: A semiconductor memory device including circuitry for detecting and repairing memory cell failures in a test mode. The memory cell repair process is conducted in a manner that effectively eliminates unnecessary fuse rupture operations and verify operations in a test mode, thus reducing product test time.

Abstract: A device and method for controlling self-refresh is disclosed, which reduces current when a semiconductor device stays in a self-refresh operation. The device for controlling self-refresh includes: a bulk voltage controller configured to combine an idle signal indicating an active termination state of a bank and a self-refresh signal so as to generate a control signal for controlling a bulk voltage, a bulk voltage driver configured to vary a level of the bulk voltage in response to the control signal, and output the bulk voltage with a different level, and a refresh controller configured to output the self-refresh active signal upon receiving the bulk voltage as a bulk bias voltage.

Abstract: A semiconductor memory device including circuitry for detecting and repairing memory cell failures in a test mode. The memory cell repair process is conducted in a manner that effectively eliminates unnecessary fuse rupture operations and verify operations in a test mode, thus reducing product test time.