Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract: A photovoltaic power generation apparatus including a photovoltaic power generator; a frame coupled to an edge of the photovoltaic power generator; and a holder coupled to the frame, the frame including a female coupling part coupled to the edge of the photovoltaic power generator, and an inserting part extending from the female coupling part and being inserted in the holder.

Abstract: A photoelectric device that reduces optical loss, reduces recombination loss of carriers, and can be manufactured by using a simplified process is provided. The photoelectric device includes a semiconductor substrate, a first semiconductor stack on a first surface of the semiconductor substrate and having a first conductivity, and a second semiconductor stack on the first surface of the semiconductor substrate and having a second conductivity opposite to the first conductivity. Edge portions of the first and second semiconductor stacks face each other with an insulating portion therebetween.

Abstract: A solar cell array includes a number of solar cell modules, each of the solar cell modules including a frame having a first side extending along a first direction, and a first insertion hole is formed in the first side and extending along the first direction. The solar cell array also includes a connecting structure extending along a second direction perpendicular to the first direction for connecting two adjacent modules of the solar cell modules, and the connecting structure includes a first coupling portion and a second coupling portion respectively received in the first insertion holes of the two adjacent modules, wherein each of the first insertion holes has a guide portion and an insertion portion, the guide portion bending from the insertion portion to guide the first coupling portion and the second coupling portion into the respective guide portions.

Abstract: A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.

Abstract: A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.

Abstract: A photovoltaic device and a method of manufacturing the same are disclosed. In one embodiment, the device includes i) a semiconductor substrate, ii) a first conductive semiconductor layer formed on a first region of the semiconductor substrate and iii) a first transparent conductive layer formed on the first conductive semiconductor layer. The device may further include i) a second conductive semiconductor layer formed on a second region of the semiconductor substrate, ii) a second transparent conductive layer formed on the second conductive semiconductor layer and iii) a gap passivation layer interposed between i) the first layers and ii) the second layers, wherein the gap passivation layer has a thickness greater than the sum of the thicknesses of the first layers.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Abstract: A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern.

Abstract: A solar cell and a method of manufacturing the solar cell, the solar cell including a first surface configured to receive incident sunlight and having a concavo-convex pattern, a substantially flat second surface opposite to the first surface, a first doped layer formed as a crystalline silicon layer having a first dopant, and a second doped layer formed as an amorphous silicon layer having a second dopant. The processes for forming these layers, with the exception of forming the first doped layer, are performed at a low temperature. Accordingly, reflectivity of sunlight may be minimized, a high terminal voltage may be generated, and a wafer including the solar cell can be kept from being bent.

Abstract: The solar cell includes a substrate, a semiconductor layer, a first doped pattern and a second doped pattern. The substrate has a first surface adapted to receive solar light and a second surface opposite to the first surface. The semiconductor layer includes an insulating pattern formed on a first area of the second surface of the substrate and a semiconductor pattern formed on a second area of the second surface of the substrate in which the insulating pattern is not formed. The first doped pattern and the second doped pattern are formed either in or on the semiconductor pattern.

Abstract: Disclosed herein is a polycrystalline silicon solar cell, including: a back electrode formed on a transparent insulating substrate; an N-type polycrystalline silicon layer in which amorphous silicon is crystallized through MIC process, and in which electrons are accumulated; a light-absorbing layer which is formed by vertically crystallizing an intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through MIVC process, in which pairs of electrons and holes are generated in response to incident light, and which has a vertical column grain structure in which grains are arranged in the direction in which electrons and holes move; a P-type polycrystalline silicon layer which has the vertical column grain structure, and in which holes are accumulated; a transparent electrode layer; front electrodes; and an antireflection coating film, and is a method of fabricating the same.

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract: An exemplary embodiment of the present invention provides a method for manufacturing a solar cell, which includes: forming a first semiconductor layer on a first surface of a light-absorbing layer, forming a second semiconductor layer on a second surface of the light-absorbing layer, forming a first transparent conductive layer having one X-ray diffraction peak on the first semiconductor layer in a first direction, forming a second transparent conductive layer having one X-ray diffraction peak on the second semiconductor layer in a second direction opposite to the first direction, forming a first electrode on the first transparent conductive layer in the first direction and forming a second electrode on the second transparent conductive layer in the second direction, in which at least one of the first transparent conductive layer and the second transparent conductive layer is formed at about 180 to about 220° C.

Abstract: A method of forming an electrode, by which the resistance of the electrode can be reduced, and a method of manufacturing a solar cell using the method of forming an electrode are provided. The electrode forming method includes coating conductive paste on a substrate, forming a metal layer by drying the conductive paste or heating the same at low temperature, and annealing the metal layer by Joule heating using the metal layer by applying an electric field to the metal layer.