Abstract: There are provided a memory system and an operating method thereof. A memory system includes: a plurality of storage regions, each including a plurality of memory cells; and a controller configured to provide a plurality of read retry sets, determine an applying order of the plurality of read retry sets based on characteristics of a read error occurred in a first storage region among the plurality of storage regions, and apply at least one of the read retry sets, based on the applying order, for a read retry operation performed on the first storage region.

Abstract: There are provided a memory system and an operating method thereof. A memory system includes: a plurality of storage regions, each including a plurality of memory cells; and a controller configured to provide a plurality of read retry sets, determine an applying order of the plurality of read retry sets based on characteristics of a read error occurred in a first storage region among the plurality of storage regions, and apply at least one of the read retry sets, based on the applying order, for a read retry operation performed on the first storage region.

Abstract: There are provided a memory system and an operating method thereof. A memory system includes: a plurality of storage regions, each including a plurality of memory cells; and a controller configured to provide a plurality of read retry sets, determine an applying order of the plurality of read retry sets based on characteristics of a read error occurred in a first storage region among the plurality of storage regions, and apply at least one of the read retry sets, based on the applying order, for a read retry operation performed on the first storage region.

Abstract: There are provided a memory system and an operating method thereof. A memory system includes: a plurality of storage regions, each including a plurality of memory cells; and a controller configured to provide a plurality of read retry sets, determine an applying order of the plurality of read retry sets based on characteristics of a read error occurred in a first storage region among the plurality of storage regions, and apply at least one of the read retry sets, based on the applying order, for a read retry operation performed on the first storage region.

Abstract: There are provided a memory system and an operating method thereof. A memory system includes: a memory device configured to generate first read voltages and second read voltages, based on initial read voltages and first and second offset voltages, in response to a user read command, and output first data and second data, which are acquired by performing read operations on multi-bit memory cells, based on the first read voltages and the second read voltages; and a memory controller configured to output the user read command, wherein the memory controller includes a state counter configured to count numbers of data bits respectively corresponding to a plurality of threshold voltage states from the first data and the second data, and extract numbers of memory cells respectively included in a plurality of threshold voltage regions divided by the first read voltages and the second read voltages by calculating the counted result.

Abstract: There are provided a memory system and an operating method thereof. A memory system includes: a memory device configured to generate first read voltages and second read voltages, based on initial read voltages and first and second offset voltages, in response to a user read command, and output first data and second data, which are acquired by performing read operations on multi-bit memory cells, based on the first read voltages and the second read voltages; and a memory controller configured to output the user read command, wherein the memory controller includes a state counter configured to count numbers of data bits respectively corresponding to a plurality of threshold voltage states from the first data and the second data, and extract numbers of memory cells respectively included in a plurality of threshold voltage regions divided by the first read voltages and the second read voltages by calculating the counted result.

Abstract: Disclosed is a data managing method of a storage device including a nonvolatile memory device. The data managing method includes detecting an update count of update-requested page data and allocating the update-requested page data to a first memory block or a second memory block based upon the update count, an erase count of the second memory block being different from that of the first memory block.