Abstract: Disclosed are an image encoding method using a skip mode and a device using the method. The image encoding method may comprise the steps of: judging whether there is residual block data of a prediction target block on the basis of predetermined data indicating whether residual block data has been encoded; and, if there is residual block data, restoring the prediction target block on the basis of the residual block data and an intra-screen predictive value of the prediction target block. Consequently, encoding and decoding efficiency can be increased by carrying out the encoding and decoding of screen residual data only for prediction target blocks where there is a need for a residual data block in accordance with screen similarity.

Abstract: The present inventive concept relates to: a radiation detector including a bendable radiation detecting panel and a radiation inspection apparatus including same. The radiation detector includes: a radiation detecting panel which is flexible, extending in a first direction, and detecting radiation incident to a first face; and a bending support unit which is plate-shaped, provided on a second face of the radiation detecting panel opposite to the first face to support the radiation detecting panel, and having a flexibility. The flexibility of the bending support unit is less than a flexibility of the radiation detecting panel.

Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.

Abstract: A vehicle power module includes an upper substrate and a lower substrate spaced from each other in a vertical direction, a semiconductor chip connected to one of the upper substrate and the lower substrate, and a spacer formed of a metal material containing copper and connecting the semiconductor chip to the other of the upper substrate and the lower substrate or to connect the upper substrate to the lower substrate, the spacer including a plurality of penetration portions formed to penetrate an inside thereof.

Abstract: A method for providing an interactive game through a processor of a computing device is proposed. The method may include outputting a first message generated through a character account corresponding to a character of an interactive game application on a chatting application. The method may also include when a second message is acquired in response to the first message from a user account corresponding to a user playing the interactive game on the chatting application, performing a reaction determined on the basis of the second message. The character account may be created on the chatting application when the user signs up for the interactive game.

Abstract: A lightweight hand-held label applicator includes a plate, a guide channel, a flexible wiping lip, and a strip container. The plate has a supplying surface and a sliding surface, and the strip is supplied along the supplying surface toward an edge of the plate. The plate is constructed to allow easy grip by a user's fingers on the supplying surface and the sliding surface such that the strip is in contact with the sliding surface and pulled away from the edge of the plate by the user's finger. Preferably, the user's thumb holds the supplying surface or the guide channel, and the user's index or middle finger holds the sliding surface and pulls the strip away from the edge of the plate.

Abstract: Disclosed is a lighting optical system, including: a lighting optical system, comprising, a light separating means for separating incident light into three colored lights according to wavelength bands, and progressing the three separate colored lights for the same amount of distance from a light source of the incident light through different optical paths, and emitting the three separate colored lights to a first, a second and a third LCD, a first, a second and a third LCD for respectively receiving the three colored lights from the light separating means, and forming images therefrom; and a light combining means for synthesizing the three colored lights emitted from the first, second and third LCD, and outputting the synthesized light outside.

Abstract: A projector including a shiftable projection lens unit is disclosed. The projector includes an illumination unit adapted to emit generated light, a micro device adapted to receive the light from the illumination unit, and to produce an image using the received light, a projection lens unit adapted to emit the image produced by the micro device, a reflector arranged at a downstream end of the projection lens unit, and adapted to change a direction of the light incident from the projection lens unit on the reflector such that the image is externally emitted, and a driving unit adapted to shift the projection lens unit and the reflector, thereby adjusting an emission direction of the externally-emitted image.

Abstract: A projection lens unit and a thin projector using the same are disclosed. The projection lens unit includes a plurality of lens sets for emitting light carrying an image, and a reflector arranged between adjacent ones of the lens sets or at a downstream end of the lens sets, and adapted to change a direction of light incident on the reflector.

Abstract: A thin projector is disclosed. The thin projector includes a housing having an upright panel shape, an illumination unit arranged in the interior of the housing, the illumination unit generating light and emitting the generated light, a micro device arranged in the interior of the housing, the micro device receiving the light from the illumination unit and producing an image using the received light, and a projection lens unit arranged in the interior of the housing, the projection lens unit including an emission unit adapted to externally emit the image produced by the micro device and arranged to be externally exposed through a front side of the housing.

Abstract: Disclosed is a lighting optical system, including: a lighting optical system, comprising, a light separating means for separating incident light into three colored lights according to wavelength bands, and progressing the three separate colored lights for the same amount of distance from a light source of the incident light through different optical paths, and emitting the three separate colored lights to a first, a second and a third LCD, a first, a second and a third LCD for respectively receiving the three colored lights from the light separating means, and forming images therefrom; and a light combining means for synthesizing the three colored lights emitted from the first, second and third LCD, and outputting the synthesized light outside.

Abstract: Disclosed is a lighting optical system, including: a ighting optical system, comprising, a light separating means for separating incident light into three colored lights according to wavelength bands, and progressing the three separate colored lights for the same amount of distance from a light source of the incident light through different optical paths, and emitting the three separate colored lights to a first, a second and a third LCD, a first, a second and a third LCD for respectively receiving the three colored lights from the light separating means, and forming images therefrom; and a light combining means for synthesizing the three colored lights emitted from the first, second and third LCD, and outputting the synthesized light outside.

Abstract: A display apparatus including a plurality of lamps emitting light beams for illumination of the display apparatus is disclosed. The plurality of lamps are located on a circular or spherical plane about a common focal point, and have the same distance from the focal point as one another.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing the same. The minimum marginal width of an impurity diffusion layer is defined to reduce by a given width. The reduced width of the impurity diffusion layer is compensated for through a silicon growth layer formed on the top of a device isolation film having a relatively higher degree of freedom than the bottom of the device isolation film. Thus, the degree of integration in the semiconductor device can be improved while keeping intact the minimum marginal width of the impurity diffusion layer.

Abstract: A highly-integrated, high speed semiconductor device includes a device isolation film defining an active region at a SOI wafer having a stacked structure of a first silicon layer, a filled insulating film and a second silicon layer—the second silicon layer being the active region between the device isolation film with an intervening first silicide layer; the first silicide layer formed on a gate electrode on the active region and an impurity junction region; and a second silicide layer intervening at the interface of a device isolation film and a second silicon layer and connected to the first silicide layer. Thus, operating characteristics of the device are improved by minimizing the resistance of an impurity junction region and reducing the manufacturing cost.

Abstract: A highly-integrated, high speed semiconductor device includes a device isolation film defining an active region at a SOI wafer having a stacked structure of a first silicon layer, a filled insulating film and a second silicon layer—the second silicon layer being the active region between the device isolation film with an intervening first silicide layer; the first silicide layer formed on a gate electrode on the active region and an impurity junction region; and a second silicide layer intervening at the interface of a device isolation film and a second silicon layer and connected to the first silicide layer. Thus, operating characteristics of the device are improved by minimizing the resistance of an impurity junction region and reducing the manufacturing cost.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing the same. The minimum marginal width of an impurity diffusion layer is defined to reduce by a given width. The reduced width of the impurity diffusion layer is compensated for through a silicon growth layer formed on the top of a device isolation film having a relatively higher degree of freedom than the bottom of the device isolation film. Thus, the degree of integration in the semiconductor device can be improved while keeping intact the minimum marginal width of the impurity diffusion layer.

Abstract: A highly-integrated, high speed semiconductor device includes a device isolation film defining an active region at a SOI wafer having a stacked structure of a first silicon layer, a filled insulating film and a second silicon layer—the second silicon layer being the active region between the device isolation film with an intervening first silicide layer; the first silicide layer formed on a gate electrode on the active region and an impurity junction region; and a second silicide layer intervening at the interface of a device isolation film and a second silicon layer and connected to the first silicide layer. Thus, operating characteristics of the device are improved by minimizing the resistance of an impurity junction region and reducing the manufacturing cost.

Abstract: A highly-integrated, high speed semiconductor device includes a device isolation film defining an active region at a SOI wafer having a stacked structure of a first silicon layer, a filled insulating film and a second silicon layer-the second silicon layer being the active region between the device isolation film with an intervening first silicide layer; the first silicide layer formed on a gate electrode on the active region and an impurity junction region; and a second silicide layer intervening at the interface of a device isolation film and a second silicon layer and connected to the first silicide layer. Thus, operating characteristics of the device are improved by minimizing the resistance of an impurity junction region and reducing the manufacturing cost.