Patents by Inventor Nam-Sung Kim

Nam-Sung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12283307
    Abstract: A storage device includes a memory including a plurality of word lines, a plurality of bit lines and a plurality of memory cells, and a controller configured to control the memory and perform a read retry operation for the memory using a read retry table. The memory includes a special block that stores a read retry table in which a plurality of read retry values are set for each of a plurality of first conditions and each of a plurality of second conditions corresponding to each of the plurality of first conditions.
    Type: Grant
    Filed: December 7, 2022
    Date of Patent: April 22, 2025
    Assignee: SK hynix Inc.
    Inventors: Jae Yong Son, Nam Kyeong Kim, Hoon Cho, Hyuk Min Kwon, Dae Sung Kim, Jang Seob Kim, Sang Ho Yun
  • Publication number: 20250105595
    Abstract: The present invention relates to a method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, and the method includes forming, on a substrate, a reference region having a first bandgap and a region having a bandgap, which is red-shifted relative to the first bandgap, through active layer epitaxial growth, and applying a blue-shift to the substrate to form a region having a second bandgap that is blue-shifted relative to the first bandgap.
    Type: Application
    Filed: September 24, 2024
    Publication date: March 27, 2025
    Inventors: O Kyun KWON, Nam Je KIM, Ho Sung KIM, Mi Ran PARK, Seung Chul LEE, Won Seok HAN
  • Publication number: 20250104915
    Abstract: A release film including: a base film; and a release layer disposed on one surface of the base film, wherein the release layer is a cured layer of a release composition including a heterocyclic compound including nitrogen and polydimethylsiloxane, and when analyzing a surface using X-ray photoelectron spectroscopy (XPS), the release layer has an atomic ratio of nitrogen (N) to silicon (Si) (N/Si) of 0.6 to 1.1.
    Type: Application
    Filed: June 4, 2024
    Publication date: March 27, 2025
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Dae Jin SHIM, Jung Jin PARK, Jung Jin PARK, Jae Won KIM, Hyo Sung CHOI, Nam Ju YOO, Jung Hee KIM, Jong Ho LEE
  • Patent number: 12210473
    Abstract: A computing device includes a host processor to execute a host driver to create a host-side interface, the host-side interface emulating a first Ethernet interface, assign the host-side interface a first medium access control (MAC) address and a first Internet Protocol (IP) address. Memory components are disposed on a substrate. A memory channel network (MCN) processor is disposed on the substrate and coupled between the memory components and the host processor. The MCN processor is to execute an MCN driver to create a MCN-side interface, the MCN-side interface emulating a second Ethernet interface. The MCN processor is to assign the MCN-side interface a second MAC address and a second IP address, which identify the MCN processor as a MCN network node to the host processor.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: January 28, 2025
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Nam Sung Kim, Mohammad Alian
  • Publication number: 20240402752
    Abstract: A computer architecture provides both a parallel memory bus and serial memory bus between a processor system and memory. Latency-tolerant memory access requests are steered to the serial memory bus which operates to increase the available memory bus bandwidth on the parallel memory. The invention also provides integrated circuit computer memory suitable for this application.
    Type: Application
    Filed: August 13, 2024
    Publication date: December 5, 2024
    Inventors: Hao Wang, Nam Sung Kim
  • Publication number: 20240385886
    Abstract: A method for translation and optimization for acceleration and its circuit are disclosed. The method includes: detecting a code region executing on a central processing unit (CPU) core for acceleration, the code region comprising a plurality of instructions; mapping, in hardware, the plurality of instructions in linear order to a planar grid for a spatial accelerator; configuring the spatial accelerator based on the planar grid; and transferring control to the spatial accelerator to execute the code region. Other aspects, embodiments, and features are also claimed and described.
    Type: Application
    Filed: May 14, 2024
    Publication date: November 21, 2024
    Inventors: Nam Sung Kim, Dong Kai Wang
  • Patent number: 12140992
    Abstract: A computer architecture provides both a parallel memory bus and serial memory bus between a processor system and memory. Latency-tolerant memory access requests are steered to the serial memory bus which operates to increase the available memory bus bandwidth on the parallel memory. The invention also provides integrated circuit computer memory suitable for this application.
    Type: Grant
    Filed: August 4, 2023
    Date of Patent: November 12, 2024
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Hao Wang, Nam Sung Kim
  • Patent number: 12050810
    Abstract: Systems and methods for hardware-based asynchronous logging include: initiating first and second atomic regions on first and second cores of a central processing unit (CPU); and asynchronously logging data for the first atomic region and the second atomic region using the CPU by: asynchronously performing log persist operations (LPOs) to log an old data value from each atomic region; updating the old data value to a new data value from each atomic region; tracking dependencies between the first atomic region and the second atomic region using a memory controller; asynchronously performing data persist operations (DPOs) to persist the new data value for each atomic region; and committing the first atomic region and the second atomic region based on the dependencies using the memory controller of the CPU.
    Type: Grant
    Filed: September 27, 2022
    Date of Patent: July 30, 2024
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Ahmed Abulila, Nam Sung Kim, Izzat El Hajj
  • Publication number: 20240103760
    Abstract: Systems and methods for hardware-based asynchronous logging include: initiating first and second atomic regions on first and second cores of a central processing unit (CPU); and asynchronously logging data for the first atomic region and the second atomic region using the CPU by: asynchronously performing log persist operations (LPOs) to log an old data value from each atomic region; updating the old data value to a new data value from each atomic region; tracking dependencies between the first atomic region and the second atomic region using a memory controller; asynchronously performing data persist operations (DPOs) to persist the new data value for each atomic region; and committing the first atomic region and the second atomic region based on the dependencies using the memory controller of the CPU.
    Type: Application
    Filed: September 27, 2022
    Publication date: March 28, 2024
    Inventors: Ahmed Abulila, Nam Sung Kim, Izzat El Hajj
  • Publication number: 20240086345
    Abstract: A memory device includes a buffer die configured to receive a first broadcast command and a second broadcast command from an external device; and a plurality of core dies stacked on the buffer die. The plurality of core dies include: a first core die including a first processing circuit, a first memory cell array, a first command decoder configured to decode the first broadcast command, and a first data input/output circuit configured to output data of the first memory cell array to a common data input/output bus under control of the first command decoder; and a second core die including a second processing circuit, a second memory cell array, a second command decoder configured to decode the second broadcast command, and a second data input/output circuit configured to receive the data of the first memory cell array through the common data input/output bus under control of the second command decoder.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Applicant: SAMSUNG ELECTRONICS Co., LTD.
    Inventors: Sang-Hyuk KWON, Nam Sung KIM, Kyomin SOHN, Jaeyoun YOUN
  • Publication number: 20240004419
    Abstract: A computer architecture provides both a parallel memory bus and serial memory bus between a processor system and memory. Latency-tolerant memory access requests are steered to the serial memory bus which operates to increase the available memory bus bandwidth on the parallel memory. The invention also provides integrated circuit computer memory suitable for this application.
    Type: Application
    Filed: August 4, 2023
    Publication date: January 4, 2024
    Inventors: Hao Wang, Nam Sung Kim
  • Patent number: 11860803
    Abstract: A memory device includes a buffer die configured to receive a first broadcast command and a second broadcast command from an external device; and a plurality of core dies stacked on the buffer die. The plurality of core dies include: a first core die including a first processing circuit, a first memory cell array, a first command decoder configured to decode the first broadcast command, and a first data input/output circuit configured to output data of the first memory cell array to a common data input/output bus under control of the first command decoder; and a second core die including a second processing circuit, a second memory cell array, a second command decoder configured to decode the second broadcast command, and a second data input/output circuit configured to receive the data of the first memory cell array through the common data input/output bus under control of the second command decoder.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: January 2, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Hyuk Kwon, Nam Sung Kim, Kyomin Sohn, Jaeyoun Youn
  • Patent number: 11848369
    Abstract: Embodiments provide methods for forming nanowire structures, such as, for example, horizontal gate-all-around (hGAA) structures. In one embodiment, a method includes selectively etching material from a stack disposed on a material layer located on a substrate with a plasma to create recesses on each of first and second sides of the stack and depositing a dielectric material on the first and second sides. The stack includes repeating pairs of first and second layers. The method also includes removing the dielectric material from the first and second sides, where the dielectric material remains in the recesses of the first and second sides, and selectively depositing a stressor layer on regions of the first and second sides which are unprotected by the dielectric material to form gaps between the stressor layer and the dielectric material remaining in the recesses of the first and second sides.
    Type: Grant
    Filed: February 16, 2022
    Date of Patent: December 19, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shiyu Sun, Nam Sung Kim, Bingxi Sun Wood, Naomi Yoshida, Sheng-Chin Kung, Miao Jin
  • Publication number: 20230333852
    Abstract: A dataflow-based general-purpose processor architecture and its method are disclosed. A circuit for the dataflow-based general-purpose processor architecture includes multiple processing elements (PEs) corresponding to multiple assigned central processing unit (CPU) instructions in program order, a register file, and multiple feedforward register lanes configured to map each of the multiple assigned CPU instructions on the multiple PEs to the register file or another PE of the multiple PEs to construct a hardware datapath corresponding to a dataflow graph of the multiple assigned CPU instructions. Other aspects, embodiments, and features are also claimed and described.
    Type: Application
    Filed: April 17, 2023
    Publication date: October 19, 2023
    Inventors: Nam Sung Kim, Dong Kai Wang
  • Patent number: 11763876
    Abstract: A memory device includes a memory cell array including a plurality of banks each including a plurality of memory cells connected to a plurality of word lines, and a row decoder block connected to the plurality of banks. In a first operation mode, the row decoder block receives a first row address and a first bank address together with an activation command and activates a word line selected by the first row address from among the plurality of word lines of a bank selected by the first bank address from among the plurality of banks. In a second operation mode, the row decoder block receives a second row address and a second bank address together with the activation command and activates a word line selected by the second row address from among the plurality of word lines of each of at least two banks of the plurality of banks.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: September 19, 2023
    Inventors: Sang-Hyuk Kwon, Nam Sung Kim, Kyomin Sohn, Seongil O, Haesuk Lee
  • Patent number: 11755060
    Abstract: A computer architecture provides both a parallel memory bus and serial memory bus between a processor system and memory. Latency-tolerant memory access requests are steered to the serial memory bus which operates to increase the available memory bus bandwidth on the parallel memory. The invention also provides integrated circuit computer memory suitable for this application.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: September 12, 2023
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Hao Wang, Nam Sung Kim
  • Patent number: 11620504
    Abstract: A neuromorphic device includes a memory cell array that includes first memory cells corresponding to a first address and storing first weights and second memory cells corresponding to a second address and storing second weights, and a neuron circuit that includes an integrator summing first read signals from the first memory cells and an activation circuit outputting a first activation signal based on a first sum signal of the first read signals output from the integrator.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: April 4, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hak-Soo Yu, Nam Sung Kim, Kyomin Sohn, Jaeyoun Youn
  • Publication number: 20230071386
    Abstract: A computing device includes a host processor to execute a host driver to create a host-side interface, the host-side interface emulating a first Ethernet interface, assign the host-side interface a first medium access control (MAC) address and a first Internet Protocol (IP) address. Memory components are disposed on a substrate. A memory channel network (MCN) processor is disposed on the substrate and coupled between the memory components and the host processor. The MCN processor is to execute an MCN driver to create a MCN-side interface, the MCN-side interface emulating a second Ethernet interface. The MCN processor is to assign the MCN-side interface a second MAC address and a second IP address, which identify the MCN processor as a MCN network node to the host processor.
    Type: Application
    Filed: November 4, 2022
    Publication date: March 9, 2023
    Inventors: Nam Sung Kim, Mohammad Alian
  • Patent number: 11520724
    Abstract: A system includes a printed circuit board (PCB) on which is disposed memory components and a processor disposed on the PCB and coupled between the memory components and a host memory controller. The processor comprises a memory channel network (MCN) memory controller to handle memory requests associated with the memory components; a local buffer; and a core coupled to the MCN memory controller and the local buffer. The core executes an operating system (OS) running a network software layer and a distributed computing framework; and an MCN driver to: receive a network packet from the network software layer; store the network packet in the local buffer; and assert a transmit polling field of the local buffer to signal to the host memory controller that the network packet is available for transmission to a host computing device.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: December 6, 2022
    Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Nam Sung Kim, Mohammad Alian
  • Publication number: 20220318164
    Abstract: A memory device includes a buffer die configured to receive a first broadcast command and a second broadcast command from an external device; and a plurality of core dies stacked on the buffer die. The plurality of core dies include: a first core die including a first processing circuit, a first memory cell array, a first command decoder configured to decode the first broadcast command, and a first data input/output circuit configured to output data of the first memory cell array to a common data input/output bus under control of the first command decoder; and a second core die including a second processing circuit, a second memory cell array, a second command decoder configured to decode the second broadcast command, and a second data input/output circuit configured to receive the data of the first memory cell array through the common data input/output bus under control of the second command decoder.
    Type: Application
    Filed: March 3, 2022
    Publication date: October 6, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Hyuk KWON, Nam Sung Kim, Kyomin Sohn, Jaeyoun Youn