Abstract: A wafer processing apparatus may include a light source unit emitting a first beam, a first spatial laser modulator reflecting the first beam, a beam expander adjusting a divergence angle of the first beam, a sensor unit emitting a second beam, a second spatial laser modulator reflecting the second beam, a galvanometer reflecting the first beam or the second beam, and a condensing lens refracting the first beam or the second beam. The sensor unit may receive position information generated while the second beam is moving in a first direction on a wafer. The first beam may be condensed to a condensing point by the condensing lens. Angle information for controlling a height level of the condensing point may be generated based on the position information. The beam expander may adjust the divergence angle of the first beam based on the angle information.

Abstract: An apparatus for substrate dicing includes: a laser beam emitter outputting a laser beam; a stage on which a test substrate is loaded, wherein the test substrate includes a sample substrate and a test film; a laser beam modulator modulating the laser beam to output a modulated beam; an optical system transferring the modulated beam into the sample substrate; a camera capturing the modulated beam that is reflected from the test film; and a controller generating a control signal based on at least one of a reaction point being formed in the test film or a shape of the reaction point of the test film being biased toward one side with respect to a central axis, wherein the laser beam modulator is configured to modulate the laser beam based on the control signal to output the modulated beam.