Abstract: Provided is a semiconductor device including an interconnection structure provided on a cell region of a substrate to include a first line and a second line sequentially stacked on the substrate, and a defect detection structure provided on a peripheral region of the substrate to include first and second defect detection lines provided at the same levels as those of the first and second lines, respectively.

Abstract: A method of dividing a substrate includes preparing a substrate including a crystalline semiconductor layer having a scribe lane region and device regions, a dielectric layer on the crystalline semiconductor layer, and a partition structure in physical contact with the dielectric layer and provided on the scribe lane region of the crystalline semiconductor layer, forming an amorphous region in the crystalline semiconductor layer, and performing a grinding process on the crystalline semiconductor layer after the forming of the amorphous region. The amorphous region is formed in the scribe lane region of the crystalline semiconductor layer.

Abstract: An air conditioner includes a suction panel including a suction grille that defines a suction port configured to receive air, an heat exchanger and a fan that are positioned within the case, and an ion generator disposed in the suction panel and configured to generate ions in the air received through the suction port. The suction panel defines an installation groove recessed from an upper surface of the suction panel and configured to receive the ion generator therein. The ion generator is accommodated inside the installation groove and configured to provide ions toward the upper surface of the suction panel in an upward direction that defines a preset angle with respect to the suction panel.

Abstract: A method of fabricating a semiconductor device may include forming a first conductive layer on first to third regions of a substrate, forming a barrier layer on the first conductive layer, the barrier layer including a first barrier layer, a second barrier layer, and a sacrificial layer which are sequentially formed, sequentially forming a second conductive layer and a third conductive layer on the barrier layer, performing a first etching process to remove the third conductive layer from the second region and the third region, the third conductive layer remaining on the first region after the first etching process, and performing a second etching process to remove the second conductive layer and the sacrificial layer from the third region, the second conductive layer and the sacrificial layer remaining on the first region and on the second region after the second etching process.

Abstract: Methods in which targeted SEPHS2 disruption/inhibition and/or administration of selenite are used, e.g., in cancers that express SLC7A11.

Abstract: A method of fabricating a semiconductor device may include forming a first conductive layer on first to third regions of a substrate, forming a barrier layer on the first conductive layer, the barrier layer including a first barrier layer, a second barrier layer, and a sacrificial layer which are sequentially formed, sequentially forming a second conductive layer and a third conductive layer on the barrier layer, performing a first etching process to remove the third conductive layer from the second region and the third region, the third conductive layer remaining on the first region after the first etching process, and performing a second etching process to remove the second conductive layer and the sacrificial layer from the third region, the second conductive layer and the sacrificial layer remaining on the first region and on the second region after the second etching process.

Abstract: A method of fabricating a semiconductor device may include forming a first conductive layer on first to third regions of a substrate, forming a barrier layer on the first conductive layer, the barrier layer including a first barrier layer, a second barrier layer, and a sacrificial layer which are sequentially formed, sequentially forming a second conductive layer and a third conductive layer on the barrier layer, performing a first etching process to remove the third conductive layer from the second region and the third region, the third conductive layer remaining on the first region after the first etching process, and performing a second etching process to remove the second conductive layer and the sacrificial layer from the third region, the second conductive layer and the sacrificial layer remaining on the first region and on the second region after the second etching process.

Abstract: A semiconductor device includes a substrate including a first region and a second region at least partially surrounding the first region in a plan view. A protection pattern is disposed on the second region of the substrate and at least partially surrounds the first region of the substrate in the plan view. A protection trench overlaps the protection pattern and at least partially surrounds the first region of the substrate in the plan view, along the protection pattern. A width of the protection trench is different from a width of the protection pattern.

Abstract: A method of dividing a substrate includes preparing a substrate including a crystalline semiconductor layer having a scribe lane region and device regions, a dielectric layer on the crystalline semiconductor layer, and a partition structure in physical contact with the dielectric layer and provided on the scribe lane region of the crystalline semiconductor layer, forming an amorphous region in the crystalline semiconductor layer, and performing a grinding process on the crystalline semiconductor layer after the forming of the amorphous region. The amorphous region is formed in the scribe lane region of the crystalline semiconductor layer.

Abstract: A method of fabricating a semiconductor device may include forming a first conductive layer on first to third regions of a substrate, forming a barrier layer on the first conductive layer, the barrier layer including a first barrier layer, a second barrier layer, and a sacrificial layer which are sequentially formed, sequentially forming a second conductive layer and a third conductive layer on the barrier layer, performing a first etching process to remove the third conductive layer from the second region and the third region, the third conductive layer remaining on the first region after the first etching process, and performing a second etching process to remove the second conductive layer and the sacrificial layer from the third region, the second conductive layer and the sacrificial layer remaining on the first region and on the second region after the second etching process.

Abstract: A method of dividing a substrate includes preparing a substrate including a crystalline semiconductor layer having a scribe lane region and device regions, a dielectric layer on the crystalline semiconductor layer, and a partition structure in physical contact with the dielectric layer and provided on the scribe lane region of the crystalline semiconductor layer, forming an amorphous region in the crystalline semiconductor layer, and performing a grinding process on the crystalline semiconductor layer after the forming of the amorphous region. The amorphous region is formed in the scribe lane region of the crystalline semiconductor layer.

Abstract: A semiconductor device includes a substrate including a first region and a second region at least partially surrounding the first region in a plan view. A protection pattern is disposed on the second region of the substrate and at least partially surrounds the first region of the substrate in the plan view. A protection trench overlaps the protection pattern and at least partially surrounds the first region of the substrate in the plan view, along the protection pattern. A width of the protection trench is different from a width of the protection pattern.

Abstract: Disclosed herein is a fast data call connection method capable of reducing a connection time and increasing the probability of connection success in a CDMA 2000 network. In the fast data call connection method of the present invention, the PDSN transmits a data call connection request message, including an authentication type and a challenge value, to the MS. The MS transmits a data call connection response message, including a response to the challenge value, to the PDSN. The PDSN performs authentication with reference to the data call connection response message, and transmits a data call connection complete message to the MS if authentication succeeds. Accordingly, the present invention is advantageous in that it can reduce connection time, can increase the probability of connection success, and can guarantee compatibility by checking the MS version before a data call connection process is executed.

Abstract: A multimedia mobile communication system for recovering a handoff failure comprises: a hybrid access terminal; a base station transceiver subsystem for transmitting and receiving the voice and the data; a base station a mobile switching center a 1×EV-DO transceiver; and an access network controller for controlling the handoff by transmitting a traffic channel assignment signal when there is no response from the hybrid access terminal upon receiving the route update signal from the hybrid access terminal and transmitting the traffic channel assignment signal in response to the route update signal and a packet data serving node.

Abstract: There is provided a system for detecting a location of a mobile station (MS) by using a pilot strength measurement message (PSMM) in a mobile communication system providing a location-based service in a mobile communication network, comprising: a position determination entity (PDE) for detecting the location of the mobile station, collecting PSMM information from the mobile station, the location detection of which is required, and obtaining the location of the mobile station by using collected PSMM information.

Abstract: Disclosed herein is a fast data call connection method capable of reducing a connection time and increasing the probability of connection success in a CDMA 2000 network. In the fast data call connection method of the present invention, the PDSN transmits a data call connection request message, including an authentication type and a challenge value, to the MS. The MS transmits a data call connection response message, including a response to the challenge value, to the PDSN. The PDSN performs authentication with reference to the data call connection response message, and transmits a data call connection complete message to the MS if authentication succeeds. Accordingly, the present invention is advantageous in that it can reduce connection time, can increase the probability of connection success, and can guarantee compatibility by checking the MS version before a data call connection process is executed.

Abstract: A telecommunication system for appointing a frequency assignment mode and ratio for providing a broadcast/multicast service includes at least one access terminal (AT) for receiving a 1xEV-DO service or the BCMCS through a 1xEV-DO system, a base station manager (BSM) for receiving BCMCS control information containing the FA mode and/or the BCMCS assignment ratio and transmitting the received BCMCS control information to a 1xEV-DO access network controller (ANC), and an access network including a 1xEV-DO access network transceiver subsystem (ANTS) and the 1xEV-DO access network controller for temporarily storing the received BCMCS control information and controlling a sort and/or a ratio of a message, which is transmitted to each access terminal, according to the FA mode and/or the BCMCS assignment ratio contained in the BCMCS control information.

Abstract: There is provided a system for detecting a location of a mobile station (MS) by using a pilot strength measurement message (PSMM) in a mobile communication system providing a location-based service in a mobile communication network, comprising: a position determination entity (PDE) for detecting the location of the mobile station, collecting PSMM information from the mobile station, the location detection of which is required, and obtaining the location of the mobile station by using collected PSMM information.

Abstract: The system in accordance with the present invention recognizes in real time that a call connection of a hybrid access terminal be switched over to a 1X system, by sending an inquiry message inquiring the hybrid access terminal of whether the hybrid access terminal has received voice signal or a low-rate data signal and by receiving a confirmation message that the hybrid access terminal has received the voice signal or the low-rate data signal from a mobile switching center, if a low-level signal below a prescribed level is received from the hybrid access terminal while counting time initiated from a point of a call drop while the hybrid access terminal is being provided with a multimedia service.

Abstract: The present invention relates to a method and system for switching over a call connection of a hybrid access terminal to a 1X system if a 1XEV-DO system has a problem when the hybrid access terminal requests a call connection to the 1xEV-DO system. The system in accordance with the present invention includes the hybrid access terminal, a 1X transceiver subsystem, a 1X controller, a mobile switching center, an access network transceiver subsystem, an access network controller, a packet data serving node and an IP network.