Patents by Inventor Nami Kimura

Nami Kimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of shallow junction by implantation of dopant into partially crystalline disordered region
    Patent number: 5145794
    Abstract: A process for producing a semiconductor device, in which a predetermined electroconductive type ion is implanted into a semiconductor substrate, the process comprising the steps of: prior to the implantation of a predetermined electroconductive type ion, implanting an ion different from the electroconductive type ion into the semiconductor substrate having a crystalline structure, to form a disordered region having a degree of disorder such that microchanneling of the later implanted electroconductive type ion does not substantially occur, and that the disordered region is partially crystalline; and implanting the predetermined electroconductive type ion into the disordered region.
    Type: Grant
    Filed: September 6, 1990
    Date of Patent: September 8, 1992
    Assignee: Fujitsu Limited
    Inventors: Masataka Kase, Nami Kimura, Yoshio Kikuchi