Abstract: A semiconductor device (100) includes: a first thin film transistor (105) of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (200). Each photosensor section (200) includes a photodetecting portion including a thin film diode (202), a capacitor (206) for storing a photocurrent occurring in the thin film diode (202), and a second thin film transistor (204) of the first conductivity type, the photodetecting portion being connected to the capacitor (206) via the second thin film transistor (204); the first and second thin film transistors (105, 204) and the thin film diode (202) have semiconductor layers made of the same semiconductor film; and a characteristic of the first thin film transistor (105) and a characteristic of the second thin film transistor (204) are different.

Abstract: The present invention provides a substrate for a liquid crystal display panel, the substrate being capable of effectively suppressing the occurrence of crosstalk and flicker without decreasing the aperture ratio. One aspect of the present invention is a substrate for a liquid crystal display panel, provided with: a light-shielding electroconductive member; a thin-film transistor arranged in a layer above the light-shielding electroconductive member; a transparent electrode wiring line arranged in a layer above the thin-film transistor, and a pixel electrode arranged in a layer above the transparent electrode wiring line. The light-shielding electroconductive member is a light-shielding element that covers the channel region of the thin-film transistor and is a wiring line connected to the transparent electrode wiring line, and the transparent electrode wiring line has a portion opposing the pixel electrode, with an insulating film disposed therebetween.

Abstract: A semiconductor device (100) includes: a first thin film transistor (105) of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (200). Each photosensor section (200) includes a photodetecting portion including a thin film diode (202), a capacitor (206) for storing a photocurrent occurring in the thin film diode (202), and a second thin film transistor (204) of the first conductivity type, the photodetecting portion being connected to the capacitor (206) via the second thin film transistor (204); the first and second thin film transistors (105, 204) and the thin film diode (202) have semiconductor layers made of the same semiconductor film; and a characteristic of the first thin film transistor (105) and a characteristic of the second thin film transistor (204) are different.

Abstract: A photodiode (10) according to the present invention is provided with a p-type semiconductor region (11), an i-type semiconductor region (12) and an n-type semiconductor region (13). A protection film (9) provided on the surface of the photodiode has been removed from at least a light receiving portion of the photodiode (10). Accordingly, the present invention provides the photodiode (10) that has less changes in its characteristics even with the prolonged use and a display device that uses the photodiode (10).

Abstract: A photodiode (10) of the present invention has a p-type semiconductor region (11), an i-type semiconductor region (12), and an n-type semiconductor region (13). The channel length “L” of the photodiode (10) is determined by the source wiring films (8) formed by etching. This configuration provides a display device equipped with the plurality of photodiodes (10) having consistent properties.