Abstract: A large-area high-output infrared detecting device S is realized in which a heat-separation-structure diaphragm 2 made of a thermal insulating material is formed through a cavity 7 from a silicon substrate 1, a thermocouple 4 serving as an infrared detection section is formed on the diaphragm 2, a heat absorption area 5 is formed on the thermocouple 4 through insulation layers 3a and 3b so as to have an etching aperture 9 for forming a cavity in the heat absorption area 5 and the cavity 7 is formed in a short time without being influenced by the size of the heat absorption area 5 to secure a structural strength.

Abstract: An infrared detecting device possible to improve SN ratio, which is provided with a semiconductor substrate, a diaphragm set on the semiconductor substrate, a thermopile formed on the diaphragm by arranging a plurality of thermocouples composed of p-type polysilicon and n-type polysilicon in a row and electrically connecting them each other in series, and a heat absorption film formed on the central portion through an insulation layer, and sectional areas of the p-type and n-type polysilicons between hot and cold junctions of each of the thermocouples are made different from each other.

Abstract: An infrared detecting device possible to improve SN ratio, which is provided with a semiconductor substrate, a diaphragm set on the semiconductor substrate, a thermopile formed on the diaphragm by arranging a plurality of thermocouples composed of p-type polysilicon and n-type polysilicon in a row and electrically connecting them each other in series, and a heat absorption film formed on the central portion through an insulation layer, and sectional areas of the p-type and n-type polysilicons between hot and cold junctions of each of the thermocouples are made different from each other.

Abstract: A large-area high-output infrared detecting device S is realized in which a heat-separation-structure diaphragm 2 made of a thermal insulating material is formed through a cavity 7 from a silicon substrate 1, a thermocouple 4 serving as an infrared detection section is formed on the diaphragm 2, a heat absorption area 5 is formed on the thermocouple 4 through insulation layers 3a and 3b so as to have an etching aperture 9 for forming a cavity in the heat absorption area 5, and the cavity 7 is formed in a short time without being influenced by the size of the heat absorption area 5 to secure a structural strength.