Abstract: A method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.

Abstract: A hard mask may include a first layer and a second layer on the first layer. Each of the first layer and the second layer may include an amorphous carbon layer. The first layer may have a first extinction coefficient. The second layer may have a second extinction coefficient and the second extinction coefficient may be different from the first extinction coefficient. The first extinction coefficient and the second extinction coefficient each may be in a range of 0.4 to 0.7.

Abstract: Provided is a method for stably synthesizing an error-free gene using a high-depth oligonucleotide tiling, which includes designing an oligonucleotide fragment by an over-overlapping method, synthesizing the oligonucleotide fragment using DNA microarray, retrieving error-free oligonucleotide fragments retrieved by next generation sequencing, and assembling the error-free oligonucleotide fragments.

Abstract: Provided is a method for stably synthesizing an error-free gene using a high-depth oligonucleotide tiling, which includes designing an oligonucleotide fragment by an over-overlapping method, synthesizing the oligonucleotide fragment using DNA microarray, retrieving error-free oligonucleotide fragments retrieved by next generation sequencing, and assembling the error-free oligonucleotide fragments.

Abstract: An atomic layer deposition apparatus including a substrate loading unit provided in a process chamber, the substrate loading unit including at least one substrate loading plate on which a substrate is to be loaded, an injector assembly coupled to the process chamber and configured to supply a plurality of reactants to deposit a multilayer film onto the substrate while sweeping over the substrate loaded on the substrate loading plate, a plurality of first heat sources configured to heat in a non-contact manner, and, a plurality of second heat sources configured to heat in a contact manner, the first and second heat sources at different positions in the process chamber may be provided.