Patents by Inventor Nan M. Jokerst

Nan M. Jokerst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180289263
    Abstract: Systems and methods are described in this disclosure for an endoscopic optical system comprising a diffuse reflectance spectroscopy probe. The probe includes a light source and a plurality of photodetectors. Each photodetector is positioned at a difference distance from the light source such that an interrogation volume of each photodetector is based at least in part on the distance between the photodetector and the light source. In some implementations, each photodetector of the plurality of photodetectors is at least partially annular in shape and the photodetectors of the plurality of photodetectors are arranged concentrically.
    Type: Application
    Filed: March 30, 2018
    Publication date: October 11, 2018
    Inventors: Nan M. Jokerst, Deborah A. Fisher, Katherine S. Garman, Benjamin A. Lariviere
  • Patent number: 5401983
    Abstract: Various novel lift-off and bonding processes (60, 80, 100) permit lift-off of thin film materials and devices (68), comprising In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y where 0<x<1, and 0<y<1, from a growth substrate (62) and then subsequent alignable bonding of the same to a host substrate (84). As a result, high quality communication devices can be fabricated for implementing a three dimensional electromagnetic communication network within a three dimensional integrated circuit cube (10), an array (90) of optical detectors (98) for processing images at very high speed, and a micromechanical device (110) having a platform (114) for steering or sensing electromagnetic radiation or light.
    Type: Grant
    Filed: April 7, 1993
    Date of Patent: March 28, 1995
    Assignee: Georgia Tech Research Corporation
    Inventors: Nan M. Jokerst, Martin A. Brooke, Mark G. Allen
  • Patent number: 5286335
    Abstract: Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps. An epitaxial layer(s) is deposited on a sacrificial layer situated on a growth substrate. Device layers may be defined in the epitaxial layer. All exposed sides of the epitaxial layer is coated with a transparent carrier layer. The sacrificial layer is then etched away to release the combination of the epitaxial layer and the transparent carrier layer from the growth substrate. The epitaxial layer can then be aligned and selectively deposited onto a host substrate. Finally, the transparent carrier layer is removed, thereby leaving the epitaxial layer on the host substrate. An alternative process involves substantially the same methodology as the foregoing process except that the growth substrate is etched away before the sacrificial layer.
    Type: Grant
    Filed: April 8, 1992
    Date of Patent: February 15, 1994
    Assignee: Georgia Tech Research Corporation
    Inventors: Timothy J. Drabik, Nan M. Jokerst, Mark G. Allen, Martin A. Brooke
  • Patent number: 5280184
    Abstract: Three dimensional communication within an integrated circuit occurs via electromagnetic communication between emitters and detectors situated throughout the integrated circuit. The emitters and detectors can be produced in a diode or laser configuration. The emitters and detectors can be fabricated via novel lift-off and alignable deposition processes. Integrated circuit layers, including silicon and gallium arsenide, are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.
    Type: Grant
    Filed: April 8, 1992
    Date of Patent: January 18, 1994
    Assignee: Georgia Tech Research Corporation
    Inventors: Nan M. Jokerst, Martin A. Brooke, Mark G. Allen
  • Patent number: 5244818
    Abstract: Various novel processes permit integrating thin film semiconductor materials and devices using lift off, alignment, and deposition onto a host substrate. As a result, three dimensional integrated circuits can be constructed. Three dimensional communication in an integrated circuit can be implemented via electromagnetic communication between emitters and detectors fabricated via the novel processes. Integrated circuit layers are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.
    Type: Grant
    Filed: April 8, 1992
    Date of Patent: September 14, 1993
    Assignee: Georgia Tech Research Corporation
    Inventors: Nan M. Jokerst, Martin A. Brooke, Mark G. Allen