Patents by Inventor Nan-Ray Wu

Nan-Ray Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing flash memory cell
    Patent number: 8778760
    Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: July 15, 2014
    Assignee: Taiwan Memory Company
    Inventors: Yung-Chang Lin, Nan-Ray Wu, Le-Tien Jung
  • METHOD OF MANUFACTURING FLASH MEMORY CELL
    Publication number: 20140106526
    Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.
    Type: Application
    Filed: December 23, 2013
    Publication date: April 17, 2014
    Applicant: Taiwan Memory Company
    Inventors: Yung-Chang Lin, Nan-Ray Wu, Le-Tien Jung
  • Method of manufacturing flash memory cell
    Patent number: 8664062
    Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: March 4, 2014
    Assignee: Taiwan Memory Company
    Inventors: Yung-Chang Lin, Nan-Ray Wu, Le-Tien Jung
  • METHOD OF MANUFACTURING FLASH MEMORY CELL
    Publication number: 20110244640
    Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.
    Type: Application
    Filed: March 14, 2011
    Publication date: October 6, 2011
    Inventors: Yung-Chang Lin, Nan-Ray Wu, Le-Tien Jung
  • Memory Device and mobile communication device using a specific access procedure
    Publication number: 20050157563
    Abstract: A memory device for a mobile communication device. The device includes a pseudo static random access memory (PSRAM), a NAND flash memory, an interface controller and a NOR flash memory. When the mobile communication device is powered on, the microprocessor downloads a system program to the PSRAM from the NAND flash memory and shows a startup icon on a display unit according to an initial program, executing the downloaded system program in the PSRAM to accomplish startup of the mobile communication device.
    Type: Application
    Filed: August 26, 2004
    Publication date: July 21, 2005
    Applicant: COMAX SEMICONDUCTOR INC.
    Inventors: Jang-Min Lin, Nan-Ray Wu