Patents by Inventor Nanako TAMARI
Nanako TAMARI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250046580Abstract: A plasma processing a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply and a control configured to control the power supply in which the control is configured to execute heat-retaining discharge under a first condition in the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.Type: ApplicationFiled: October 21, 2024Publication date: February 6, 2025Inventors: Nanako Tamari, Kosa Hirota, Masahiro Sumiya, Masahiro Nagatani
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Patent number: 12154765Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.Type: GrantFiled: February 3, 2020Date of Patent: November 26, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Nanako Tamari, Kosa Hirota, Masahiro Sumiya, Masahiro Nagatani
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Publication number: 20240339308Abstract: An apparatus diagnostic apparatus that performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a reference chamber to create reference chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. The apparatus diagnostic apparatus also performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a calibration-target chamber to create calibration-target chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters.Type: ApplicationFiled: January 25, 2022Publication date: October 10, 2024Inventors: Satoru Matsukura, Yoshito KAMAJI, Nanako TAMARI, Akira KAGOSHIMA, Masahiro SUMIYA
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Publication number: 20240310827Abstract: An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.Type: ApplicationFiled: March 24, 2022Publication date: September 19, 2024Inventors: Nanako Tamari, Masahiro Sumiya, Akira Kagoshima, Satoru Matsukura, Yuji Nagatani
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Publication number: 20220359166Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.Type: ApplicationFiled: February 3, 2020Publication date: November 10, 2022Inventors: Nanako Tamari, Kosa Hirota, Masahiro Sumiya, Masahiro Nagatani
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Publication number: 20220262606Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.Type: ApplicationFiled: May 4, 2022Publication date: August 18, 2022Inventors: Kosa Hirota, Masahiro Sumiya, Koichi Nakaune, Nanako Tamari, Satomi Inoue, Shigeru Nakamoto
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Patent number: 11355324Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.Type: GrantFiled: March 19, 2018Date of Patent: June 7, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kosa Hirota, Masahiro Sumiya, Koichi Nakaune, Nanako Tamari, Satomi Inoue, Shigeru Nakamoto
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Publication number: 20200294777Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.Type: ApplicationFiled: March 19, 2018Publication date: September 17, 2020Inventors: Kosa HIROTA, Masahiro SUMIYA, Koichi NAKAUNE, Nanako TAMARI, Satomi INOUE, Shigeru NAKAMOTO
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Patent number: 10460913Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.Type: GrantFiled: January 30, 2017Date of Patent: October 29, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Nanako Tamari, Hitoshi Tamura, Naoki Yasui
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Publication number: 20190006153Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.Type: ApplicationFiled: January 30, 2017Publication date: January 3, 2019Inventors: Nanako TAMARI, Hitoshi TAMURA, Naoki YASUI
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Patent number: 9741579Abstract: A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.Type: GrantFiled: September 5, 2015Date of Patent: August 22, 2017Assignee: Hitachi High-Technologies CorporationInventors: Nanako Tamari, Michikazu Morimoto, Naoki Yasui
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Publication number: 20160254163Abstract: A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.Type: ApplicationFiled: September 5, 2015Publication date: September 1, 2016Inventors: Nanako TAMARI, Michikazu MORIMOTO, Naoki YASUI