Abstract: A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.

Abstract: A measurement system for taking a reading in a test zone on a surface of a substrate. A chamber forms an environment, a surface treatment station dispenses a stabilizing chemical in the test zone, a charge deposition station deposits a charge in the test zone, and a QV measurement station takes a QV based measurement in the test zone. Where the surface treatment station, the charge deposition station, and the QV measurement station all interact with the substrate within the chamber. In this manner, reliable QV measurements are taken on the substrate by controlling charge spreading with the stabilizing chemical. QV measurement stability is also improved by reducing the influence of the time trending on substrates with reactive dielectrics, such as on silicon oxynitride and high-k surfaces.