Patents by Inventor Nancy J. S. Gabriel

Nancy J. S. Gabriel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Planar heterojunction bipolar device and method
    Patent number: 4672414
    Abstract: Vertical AlGaAs heterojunction bipolar transistors (30) with planar structure together with fabrication methods therefor are disclosed. For an emitter (44) on top structure, the contacts (46) to the base (38) are formed by a diffusion of zinc dopants from the surface, and contacts (42) to the collector (34, 36) are formed by diffusions of sulfur dopants from the surface rather than by etch of connecting vias. Further, device isolation is also provided by zinc diffusions (54) rather than by mesa formation. These diffusions are by rapid thermal pulses.
    Type: Grant
    Filed: June 28, 1985
    Date of Patent: June 9, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Nancy J. S. Gabriel, Han-Tzong Yuan, Shiban K. Tiku