Abstract: Systems and methods for mitigating migration of conductive material in stacked semiconductor devices are disclosed herein. For example, a stacked semiconductor device according to the present technology can include a first die and a second die carried by and bonded to the first die. The first die has a first bonding surface and includes a first bond pad, a second bond pad spaced apart from the first bond pad, and a migration isolation pit. The migration isolation pit is positioned between the first bond pad and the second bond pad. The second die has a second bonding surface and includes a third bond pad bonded to the first bond pad and a fourth bond pad bonded to the second bond pad. In some embodiments, the second die also includes a migration isolation pit positioned between the third bond pad and the fourth bond pad.

Abstract: A semiconductor circuit includes multiple decks of semiconductor devices, each deck having multiple three-dimensional (3D) stacks. The semiconductor circuit has a nitride layer between the first deck and the second deck. The nitride layer has a self-aligned pillar through the nitride layer to electrically connect the first deck to the second deck. The nitride layer can have multiple sublayers, with a mirrored gradient doping, with lower doping toward the middle of the nitride layer and higher doping toward the outsides of the nitride layer that interfaces with the decks.

Abstract: An apparatus is described. The apparatus includes a flash memory chip having a self-aligned dielectric fill between pillars. The self-aligned dielectric fill extends through a polysilicon layer. The pillars have respective access transistors formed with the polysilicon layer. The self-aligned dielectric fill to electrically isolate the pillars.

Abstract: A semiconductor circuit includes multiple decks of semiconductor devices, each deck having multiple three-dimensional (3D) stacks. The semiconductor circuit has a nitride layer between the first deck and the second deck. The nitride layer has a self-aligned pillar through the nitride layer to electrically connect the first deck to the second deck. The nitride layer can have multiple sublayers, with a mirrored gradient doping, with lower doping toward the middle of the nitride layer and higher doping toward the outsides of the nitride layer that interfaces with the decks.