Abstract: A computer system is provided including a variety of switch components for controlling the selective activation and deactivation of the computer systems' memory storage devices, network system and interface peripheral devices. The switching components may include a switch box having one or more switches for controlling activation and deactivation of various computer components. The switch components may also include a bracket assembly having an input port, output port and an intermediate manual switch for controlling the communication between a network and a computer's processor. The bracket assembly and switch box may also be constructed to control the transmission or restriction of power or data signals to a memory storage device or may control the transmission of power or data signals to one or more interface peripheral ports.

Abstract: A computer system including a switch box and bracket assembly including one or more manual switches are provided for controlling the selective activation and deactivation of the computer systems' memory storage devices and network system. Preferably, the computer system includes a wire harnesses including a network cable for connecting a network to the bracket assembly's input port, a relay cable for connecting the bracket assembly's output port to the computer's network port and a manual switch. Instead of network communications being transmitted directly from the network to the network port, the signals are rerouted through the bracket assembly's input port, manual switch and output port, and then routed to the computer's network port. Access to the network is then controlled by simple manual manipulation of a button, toggle or knob to create an open or closed circuit.

Abstract: A computer system including a switch box is provided for controlling the selective activation and deactivation of the computer systems' memory storage devices. The switch box includes one or more pairs of switches with each pair including a power switch and a signal switch. The power switch selectively provides power to the corresponding power switches. Meanwhile, the signal switch selectively provides an open or closed circuit for allowing or restricting the transmission of data signals between the computers processor and memory storage device.

Abstract: A computer system including a switch box and bracket assembly including one or more manual switches are provided for controlling the selective activation and deactivation of the computer systems' memory storage devices and network system. Preferably, the computer system includes a wire harnesses including a network cable for connecting a network to the bracket assembly's input port, a relay cable for connecting the bracket assembly's output port to the computer's network port and a manual switch. Instead of network communications being transmitted directly from the network to the network port, the signals are rerouted through the bracket assembly's input port, manual switch and output port, and then routed to the computer's network port. Access to the network is then controlled by simple manual manipulation of a button, toggle or knob to create an open or closed circuit.

Abstract: A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.

Abstract: A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr and SF6 which supplies a first plurality of fluorine ions, forming a first plasma from said first gas chemistry, passivating the etch surface of the aluminum neodymium-containing layer with the first plasma to cause a second plurality of fluorine ions to replace a first portion of the residual chlorine. This second plurality of fluorine ions is a subset of the first plurality of fluorine ions.