Abstract: A charging pile includes a power system and a charging terminal. The power system includes a first power unit, a second power unit, a power control unit, and a heat sink. The first power unit is connected to the second power unit, and the first power unit and the second power unit have same output voltages and same output currents. The power control unit is configured to control the output voltages and the output currents of the two power units. The charging terminal includes a charging control module, a direct-current distribution unit, and a charging plug. The charging plug is configured to connect to a to-be-charged battery and charge the to-be-charged battery. The direct-current distribution unit is configured to allocate a power supply to the charging plug. The charging control module is configured to bill and display the charging.

Abstract: The present invention discloses a charging pile, including a power system and a charging terminal. The power system includes a first power unit, a second power unit, a power control unit, and a heat sink. The first power unit is connected to the second power unit, and the first power unit and the second power unit have same output voltages and same output currents. The power control unit is configured to control the output voltages and the output currents of the two power units. The charging terminal includes a charging control module, a direct-current distribution unit, and a charging plug. The charging plug is configured to connect to a to-be-charged battery and charge the to-be-charged battery. The direct-current distribution unit is configured to allocate a power supply to the charging plug. The charging control module is configured to bill and display the charging.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A method for providing electroless deposition of a metal layer on a plurality of metal patterns, wherein a dielectric surface is between some of the plurality of metal patterns and metal residue is on the dielectric surface is provided. The dielectric surface is pretreated with an alkaline solution with a pH of at least 8 comprising at least one complexing agent, wherein the complexing agent forms a metal complex with the metal residue and wherein some metal oxide residue remains. The dielectric surface is pretreated with an acidic solution, wherein the acidic solution dissolves metal oxide residue. Metal is electrolessly deposited on the plurality of metal patterns.

Abstract: A plating system comprises a plating solution and an apparatus for control of the plating solution, the apparatus including a Raman spectrometer for measurement of organic components, a visible light spectrometer for measurement of metallic components, and a pH probe. The plating solution can be sampled continuously or at intervals. Dosing of the plating solution adjusts for components consumed or lost in the plating process. The method of dosing is based on maintaining a desired composition of the plating solution.

Abstract: This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Abstract: This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Abstract: A method for forming semiconductor devices on a substrate under a porous low-k dielectric layer, wherein features are formed in the porous low-k dielectric layer and wherein a barrier layer is formed over the porous low-k dielectric layer is provided. Contacts are formed in the features. The barrier layer is planarized. A cap layer is formed over the contacts, wherein the forming the cap layer provides metal and organic contaminants in the porous low-k dielectric layer. The metal contaminants are removed from the porous low-k dielectric layer with a first wet process. The organic components are removed from the porous low-k dielectric layer with a second wet process.

Abstract: Embodiments of the present invention disclose a fuel cell control method. The method includes: obtaining a current output power of a fuel cell; obtaining a current inlet-outlet temperature difference of a fuel cell stack, where the current inlet-outlet temperature difference of the stack is a difference between a stack temperature and an ambient temperature; controlling a hydrogen exhaust solenoid valve according to the output power and working parameters of the hydrogen exhaust solenoid valve corresponding to the output power; and controlling the stack temperature according to the output power and the current inlet-outlet temperature difference of the stack, so that the amount of water generated in the fuel cell is equal to the amount of water discharged. In the embodiments, the fuel cell can work in a preferred state, steady output of the cell is ensured, and the service life is improved.

Abstract: A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.

Abstract: This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Abstract: A plating system comprises a plating solution and an apparatus for control of the plating solution, the apparatus including a Raman spectrometer for measurement of organic components, a visible light spectrometer for measurement of metallic components, and a pH probe. The plating solution can be sampled continuously or at intervals. Dosing of the plating solution adjusts for components consumed or lost in the plating process. The method of dosing is based on maintaining a desired composition of the plating solution.

Abstract: A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.

Abstract: A sequence of temperature control in electroless plating for microelectronic processing is disclosed in this invention. This sequence improves the uniformity of the deposit, increases the lifetime of the plating bath and is cost effective. The plating bath is heated to a temperature, which is lower than the minimum deposition temperature, in an apparatus outside the plating chamber. Then the solution is introduced into the plating chamber without the occurrence of the deposition. After the chamber is filled, the solution is heated up to the desired deposition temperature. The deposition is initialized. After the deposition, the solution is returned back to the original tank.

Abstract: Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal alloy on a substrate.

Abstract: Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal alloy on a substrate.

Abstract: A sequence of temperature control in electroless plating for microelectronic processing is disclosed in this invention. This sequence improves the uniformity of the deposit, increases the lifetime of the plating bath and is cost effective. The plating bath is heated to a temperature, which is lower than the minimum deposition temperature, in an apparatus outside the plating chamber. Then the solution is introduced into the plating chamber without the occurrence of the deposition. After the chamber is filled, the solution is heated up to the desired deposition temperature. The deposition is initialized. After the deposition, the solution is returned back to the original tank.