Patents by Inventor Nanliu LIU

Nanliu LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9611564
    Abstract: An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: April 4, 2017
    Inventors: Nanliu Liu, Zhiwen Liang, Jiao Chen, Guoyi Zhang
  • Publication number: 20150292108
    Abstract: An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.
    Type: Application
    Filed: July 9, 2014
    Publication date: October 15, 2015
    Inventors: Nanliu LIU, Zhiwen LIANG, Jiao CHEN, Guoyi ZHANG