Abstract: A pharmaceutical composition containing the substance according to any one of the following (a) to (c), an organic acid, a metal salt of an organic acid, and a sugar and/or a sugar alcohol, wherein when the pharmaceutical composition is dissolved in distilled water for injection, a pH of the pharmaceutical composition is 3.0 to 4.

Abstract: The present invention relates to a stable pharmaceutical composition comprising a compound represented by formula (I), its pharmaceutically acceptable salt or a solvate thereof. The stable pharmaceutical composition can be prepared by comprising 1) a compound represented by formula (I), its pharmaceutically acceptable salt, or a solvate thereof, 2) one or more selected from the group consisting of alkali metal chlorides, alkaline earth metal chlorides, transition metal chlorides and magnesium chloride; and 3) sugar and/or a sugar alcohol.

Abstract: According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first word line, the first memory cell including one end coupled to the first bit line and another end coupled to the first source line; a second transistor including one end coupled to the first bit line; and a third transistor including a gate coupled to the first control line, one end coupled to the first bit line, and another end coupled to the first source line.

Abstract: The present invention relates to a stable pharmaceutical composition comprising a compound represented by formula (I), its pharmaceutically acceptable salt or a solvate thereof. The stable pharmaceutical composition can be prepared by comprising 1) a compound represented by formula (I), its pharmaceutically acceptable salt, or a solvate thereof, 2) one or more selected from the group consisting of alkali metal chlorides, alkaline earth metal chlorides, transition metal chlorides and magnesium chloride; and 3) sugar and/or a sugar alcohol.

Abstract: According to one embodiment, a semiconductor memory device includes: a first bit line; a first source line; a first word line; a first control line; a first memory cell comprising a first variable resistance element and a first transistor, the first transistor including a gate coupled to the first word line, the first memory cell including one end coupled to the first bit line and another end coupled to the first source line; a second transistor including one end coupled to the first bit line; and a third transistor including a gate coupled to the first control line, one end coupled to the first bit line, and another and coupled to the first source line.

Abstract: A resistance change type memory device according to an embodiment includes a plurality of memory elements; a first to a fourth bit lines connected to the plurality of memory elements, respectively; a first to a fourth transistors connected at their one ends to the first to the fourth bit lines, respectively; a fifth transistor connected at its one end to the other ends of the first and second transistors; a sixth transistor connected at its one end to the other ends of the third and fourth transistors; and a fifth bit line connected to the other ends of the fifth and sixth transistors.