Abstract: A current generation circuit includes: a current source circuit including a first transistor and a first resistor, and configured to output a first current based on a source voltage or a drain voltage of the first transistor and a resistance of the first resistor; a current control circuit including a voltage input terminal, a second transistor and a third transistor, and configured to output a second current based on a source voltage of the second transistor and a resistance of the third transistor; and an impedance circuit including a second resistor formed of a same resistive body as the first resistor and a fourth transistor diode-connected to the second resistor, and configured to generate a control voltage at the voltage input terminal by the first current and the second current, wherein the current generation circuit is configured to output a current based on the second current.

Abstract: A current generation circuit includes: a current source circuit including a first transistor and a first resistor, and configured to output a first current based on a source voltage or a drain voltage of the first transistor and a resistance of the first resistor; a current control circuit including a voltage input terminal, a second transistor and a third transistor, and configured to output a second current based on a source voltage of the second transistor and a resistance of the third transistor; and an impedance circuit including a second resistor formed of a same resistive body as the first resistor and a fourth transistor diode-connected to the second resistor, and configured to generate a control voltage at the voltage input terminal by the first current and the second current, wherein the current generation circuit is configured to output a current based on the second current.

Abstract: A secondary battery monitoring device is equipped with a resistance circuit and a detection circuit detecting an abnormality of a secondary battery, a current generation circuit generating a failure detection circuit for setting an output terminal of the resistance circuit to a failure diagnosis voltage, and a switch which permits the failure detection circuit to flow to the output terminal of the resistance circuit by switching. Further, a method for diagnosing failure of the secondary battery monitoring device is provided.

Abstract: A secondary battery monitoring device is equipped with a resistance circuit and a detection circuit detecting an abnormality of a secondary battery, a current generation circuit generating a failure detection circuit for setting an output terminal of the resistance circuit to a failure diagnosis voltage, and a switch which permits the failure detection circuit to flow to the output terminal of the resistance circuit by switching. Further, a method for diagnosing failure of the secondary battery monitoring device is provided.

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract: To provide a current detection circuit capable of suppressing the occurrence of a large potential difference between input terminals of a differential amplifier circuit, and preventing degradation of input transistors. A differential amplifier circuit is equipped with a clamp circuit which limits gate-source voltages of a pair of PMOS transistors each having a bulk and a source connected to each other with the sources of the pair of PMOS transistors as input terminals.

Abstract: To provide a current detection circuit capable of suppressing the occurrence of a large potential difference between input terminals of a differential amplifier circuit, and preventing degradation of input transistors. A differential amplifier circuit is equipped with a clamp circuit which limits gate-source voltages of a pair of PMOS transistors each having a bulk and a source connected to each other with the sources of the pair of PMOS transistors as input terminals.

Abstract: Provided is a power supply voltage monitoring circuit capable of accurately detecting a power supply voltage with a small circuit scale and low power consumption. The power supply voltage monitoring circuit includes: a signal output circuit configured to output a signal voltage representing saturation characteristics with respect to an increase in power supply voltage; and a signal voltage monitoring circuit configured to output a signal representing that the signal voltage of the signal output circuit is normal, the signal voltage monitoring circuit including: a PMOS transistor including a gate connected to an output terminal of the signal output circuit; a first constant current circuit connected to a drain of the PMOS transistor; and an inverter including an input terminal connected to the drain of the PMOS transistor.

Abstract: Provided is a semiconductor device including a detection circuit in which, even when a load short-circuit detection circuit and a load open-circuit detection circuit perform false detection due to a fluctuation in power supply voltage and the like, an output of a false detection result can be prevented. The detection circuit includes the load short-circuit detection circuit configured to detect a short circuit of a load, the load open-circuit detection circuit configured to detect an open circuit of the load, and a logic circuit configured to output output signals of the load short-circuit detection circuit and the load open-circuit detection circuit to an output terminal of the logic circuit, in which the logic circuit outputs a signal of a non-detection logic to the output terminal when the outputs of the load open-circuit detection circuit and the load short-circuit detection circuit are detection logics.

Abstract: Provided is a power supply voltage monitoring circuit capable of accurately detecting a power supply voltage with a small circuit scale and low power consumption. The power supply voltage monitoring circuit includes: a signal output circuit configured to output a signal voltage representing saturation characteristics with respect to an increase in power supply voltage; and a signal voltage monitoring circuit configured to output a signal representing that the signal voltage of the signal output circuit is normal, the signal voltage monitoring circuit including: a PMOS transistor including a gate connected to an output terminal of the signal output circuit; a first constant current circuit connected to a drain of the PMOS transistor; and an inverter including an input terminal connected to the drain of the PMOS transistor.

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract: Provided is a voltage reference circuit which is able to obtain high PSRR without a variation in power-supply voltage and an influence of noise. A voltage reference circuit for performing voltage-current conversion on forward voltages of PN junction elements and on a difference therebetween to generate a voltage so as not to depend on a temperature is constituted by an amplifier for controlling a temperature characteristic of a voltage of an output terminal, a source follower circuit for supplying a power to the amplifier, and a PMOS transistor which is controlled by the amplifier and which controls a current to flow into the PN junction elements.

Abstract: Provided is a voltage reference circuit which is able to obtain high PSRR without a variation in power-supply voltage and an influence of noise. A voltage reference circuit for performing voltage-current conversion on forward voltages of PN junction elements and on a difference therebetween to generate a voltage so as not to depend on a temperature is constituted by an amplifier for controlling a temperature characteristic of a voltage of an output terminal, a source follower circuit for supplying a power to the amplifier, and a PMOS transistor which is controlled by the amplifier and which controls a current to flow into the PN junction elements.