Patents by Inventor Nao SHIROKURA

Nao SHIROKURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor light emitting apparatus
    Patent number: 9653657
    Abstract: A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: May 16, 2017
    Assignee: ASAHI KASEI E-MATERIALS CORPORATION
    Inventors: Fujito Yamaguchi, Nao Shirokura
  • SEMICONDUCTOR LIGHT EMITTING APPARATUS
    Publication number: 20160149089
    Abstract: A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional
    Type: Application
    Filed: June 2, 2014
    Publication date: May 26, 2016
    Applicant: ASAHI KASEI E-MATERIALS CORPORATION
    Inventors: Fujito YAMAGUCHI, Nao SHIROKURA