Patents by Inventor Nao Takano

Nao Takano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10736560
    Abstract: The present disclosure provides a computer implemented method for automatic detection of teeth clenching and/or teeth grinding in a dataset representing the level of biting force vs.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: August 11, 2020
    Assignee: Sunstar Suisse SA
    Inventors: Morten Haugland, Christian Christiansen, Nao Takano
  • Publication number: 20170071529
    Abstract: The present disclosure provides a computer implemented method for automatic detection of teeth clenching and/or teeth grinding in a dataset representing the level of biting force vs.
    Type: Application
    Filed: May 7, 2015
    Publication date: March 16, 2017
    Inventors: Morten Haugland, Christian Christiansen, Nao Takano
  • Patent number: 8784931
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer and an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, a SiO2 surface of the insulating interlayer portion on which the diffusion layer is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. A capping layer may be formed on the wiring layer by electroless plating. Consequently, a diffusion prevention layer having good adhesive properties can be formed through a simple wet process, and, the wiring layer can directly be formed on this diffusion prevention layer by a wet process. The capping layer can also be directly formed on the wiring layer by electroless plating.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: July 22, 2014
    Assignees: Waseda University, Renesas Electronics Corporation
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
  • Publication number: 20100006326
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. Consequently, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by electroless plating.
    Type: Application
    Filed: September 23, 2009
    Publication date: January 14, 2010
    Applicants: NEC ELECTRONICS CORPORATION, WASEDA UNIVERSITY
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
  • Publication number: 20040126548
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. Consequently, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by electroless plating.
    Type: Application
    Filed: October 28, 2003
    Publication date: July 1, 2004
    Applicants: WASEDA UNIVERSITY, NEC CORPORATION
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
  • Publication number: 20030124255
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. In consequence, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by the electroless plating.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 3, 2003
    Applicant: NEC CORPORATION
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
  • Publication number: 20030124263
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. In consequence, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by the electroless plating.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 3, 2003
    Applicant: NEC CORPORATION
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
  • Publication number: 20030008075
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. In consequence, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by the electroless plating.
    Type: Application
    Filed: May 28, 2002
    Publication date: January 9, 2003
    Applicant: WASEDA UNIVERSITY, NEC CORPORATION
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano