Patents by Inventor Nao Takano
Nao Takano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10736560Abstract: The present disclosure provides a computer implemented method for automatic detection of teeth clenching and/or teeth grinding in a dataset representing the level of biting force vs.Type: GrantFiled: May 7, 2015Date of Patent: August 11, 2020Assignee: Sunstar Suisse SAInventors: Morten Haugland, Christian Christiansen, Nao Takano
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Publication number: 20170071529Abstract: The present disclosure provides a computer implemented method for automatic detection of teeth clenching and/or teeth grinding in a dataset representing the level of biting force vs.Type: ApplicationFiled: May 7, 2015Publication date: March 16, 2017Inventors: Morten Haugland, Christian Christiansen, Nao Takano
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Patent number: 8784931Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer and an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, a SiO2 surface of the insulating interlayer portion on which the diffusion layer is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. A capping layer may be formed on the wiring layer by electroless plating. Consequently, a diffusion prevention layer having good adhesive properties can be formed through a simple wet process, and, the wiring layer can directly be formed on this diffusion prevention layer by a wet process. The capping layer can also be directly formed on the wiring layer by electroless plating.Type: GrantFiled: September 23, 2009Date of Patent: July 22, 2014Assignees: Waseda University, Renesas Electronics CorporationInventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
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Publication number: 20100006326Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. Consequently, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by electroless plating.Type: ApplicationFiled: September 23, 2009Publication date: January 14, 2010Applicants: NEC ELECTRONICS CORPORATION, WASEDA UNIVERSITYInventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
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Publication number: 20040126548Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. Consequently, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by electroless plating.Type: ApplicationFiled: October 28, 2003Publication date: July 1, 2004Applicants: WASEDA UNIVERSITY, NEC CORPORATIONInventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
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Publication number: 20030124255Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. In consequence, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by the electroless plating.Type: ApplicationFiled: December 10, 2002Publication date: July 3, 2003Applicant: NEC CORPORATIONInventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
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Publication number: 20030124263Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. In consequence, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by the electroless plating.Type: ApplicationFiled: December 10, 2002Publication date: July 3, 2003Applicant: NEC CORPORATIONInventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
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Publication number: 20030008075Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. In consequence, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by the electroless plating.Type: ApplicationFiled: May 28, 2002Publication date: January 9, 2003Applicant: WASEDA UNIVERSITY, NEC CORPORATIONInventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano