Abstract: An aspect of the present invention is a polishing liquid containing abrasive grains, a copolymer, and a liquid medium, in which the copolymer has a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from acrylic acid, a content of the copolymer is more than 0.01% by mass and 0.2% by mass or less based on the total amount of the polishing liquid, and a pH of the polishing liquid is more than 4.5.

Abstract: A polishing liquid containing abrasive grains, a copolymer, and a liquid medium, in which the copolymer has a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from at least one selected from the group consisting of acrylic acid and maleic acid, and a ratio of the structure unit derived from the styrene compound in the copolymer is 15 mol % or more.

Abstract: A CMP polishing liquid for polishing an insulating material, comprising a cerium oxide particle satisfying the conditions (A) and (B) below, a 4-pyrone-based compound, and water: condition (A): an average particle diameter R of the cerium oxide particle is 50 nm or more and 300 nm or less, and condition (B): when the cerium oxide particle is defined as a spherical particle having the average particle diameter R, sphericity S2/S1 provided by a specific surface area S1 of the spherical particle and a specific surface area S2 of the cerium oxide particle measured by the BET method is 3.15 or less.