Abstract: In an open-bit-line type COB structure DRAM, two adjacent rectangular device formation regions included in two different but adjacent rectangular device formation region arrays, respectively, are staggered in a bit line direction along the long side of each rectangular device formation region by one third (2 F) of a pitch (6 F) of the rectangular device formation region in the bit line direction. Two local interconnections connected through local contact holes to source/drain diffused layers formed in opposite end portions of each rectangular device formation region, are provided in parallel to a word line. Bit lines each connected through a bit contact hole to a source/drain diffused layer formed in a center portion of each rectangular device formation region, are located with a pitch of 2 F. A capacitor formed at a level higher than that of the bit line is connected through a capacitor contact hole to an end positioned above a field oxide film, of a corresponding local interconnection.