Abstract: Timing-signal delay equipment which provides an adjustable delay time, equal to a multiple of a predetermined time unit, to an input signal pulse is used as a timing source required in a circuit tester of LSIs (semiconductor large-scale integrated circuits). The timing-signal delay equipment has a plurality of delay elements (D.sub.ij 's) with weighted delay times arranged in a matrix form; a selector (S) coupled with the matrix for selecting one of the delay elements for each column of the matrix, wherein the selected delay elements are connected in series; and an arithmetic control circuit (M) that controls the selectors based on a set-up value of delay time and an error in delay time of each delay equipment. In order to provide a delay time which is equal to a multiple of a predetermined time unit in spite of an error in delay time of each delay element, either a correction matrix is connected in series to the matrix or the weight of each delay element is modified.

Abstract: Calibration of timing errors of each pin electronics unit is carried out by a main controller and a plurality of controllers, each assigned to each pin electronics unit or to each block including a plurality of pin electronics units. A reference timing signal is simultaneously distributed to each pin electronics unit or block, so that the timing error calibration is executed in parallel among the pin electronics units or the blocks.

Abstract: A memory device under test is accessed by an address generated by a pattern generator to write therein data and to read the data out to be compared with expected data, and the comparison result is stored in the fault-address memory by the same address after reading out therefrom the content of the address. When a disagreement is detected through the comparison, it is counted; however, the count operation is inhibited if the data read out from the fault-address memory is a fault data. When the counted number exceeds a predetermined value, a fault signal is generated. After the test is terminated, an address counter is operated, the fault-address memory is read out by the content of the address counter, and when fault data is detected from the output read out, the content of the address counter is fetched into the CPU.

Abstract: A semiconductor memory test equipment which reads out a memory under test by an address from a pattern generator and compares the read-out data with an expected value by a comparator, and in which a block mask memory is read out by a portion of the address and the comparing operation of the comparator is inhibited by block mask data read out from the block mask memory. Pattern data for a pattern memory, which is read out by the abovesaid address to store data to be supplied to the comparator, are transferred as parallel data from a central processor and written in the pattern memory after conversion to serial data, and serial data read out from a defective address memory are inputted to the central processor after conversion to parallel data.

Abstract: An address pattern generator for use in a test pattern generator for generating various patterns for testing semiconductor memories. A plurality of fixed registers for storing an initial value at the start of a test, a boundary value and an operand indicating the amount of change of an address are provided in common to at least two address operating circuits. The address operating circuits are each capable of taking therein the content of a desired one of the fixed registers. At least two output registers are provided, which are each capable of taking therein the operation result of a desired one of the address operating circuit. The contents of these output registers are supplied as addresses to a memory under test.

Abstract: A test pattern generating apparatus in which a microprogram describing a test pattern to be generated is read for interpretation and execution, address and data patterns are generated by arithmetic operations and a memory control signal is produced, the address and data patterns and the memory control signal being applied to a memory under test. The address pattern is provided to an area inversion control signal generation section to produce an inversion control signal corresponding to the address pattern, by which the data pattern may be inverted and then outputted.