Abstract: A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a ?C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the ?C plane of the ZnO based semiconductor substrate

Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.

Abstract: A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Abstract: A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.

Abstract: A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Abstract: A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.

Abstract: A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.

Abstract: A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.

Abstract: A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.