Patents by Inventor Naofumi HIRATA

Naofumi HIRATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 11830920
    Abstract: A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: November 28, 2023
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Naofumi Hirata, Tomomi Kuraguchi, Shinichi Ueki, Yoichi Hori, Kei Tanihira
  • SEMICONDUCTOR DEVICE
    Publication number: 20220293762
    Abstract: A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.
    Type: Application
    Filed: August 19, 2021
    Publication date: September 15, 2022
    Inventors: Naofumi HIRATA, Tomomi KURAGUCHI, Shinichi UEKI, Yoichi HORI, Kei TANIHIRA