Abstract: A film forming apparatus includes a process chamber 2 configured to accommodate a semiconductor wafer W; a worktable 5 disposed inside the process chamber 2 and configured to place the semiconductor wafer W thereon; a showerhead 40 used as a process gas delivery mechanism disposed to face the worktable 5 and configured to delivery a process gas into the process chamber 2; and an exhaust unit 101 configured to exhaust gas from inside the process chamber 2, wherein the showerhead 40 has a gas passage formed therein for supplying the process gas, and an annular temperature adjusting cell 400 formed therein around the gas passage.

Abstract: A single-substrate-processing apparatus includes an airtight process chamber, in which a worktable is supported by a pedestal. A conduction structure is arranged to conduct static electricity generated on the worktable and a wafer thereon to a grounded portion outside the process chamber. The conduction structure has a conductive film formed on insulating surfaces of the worktable and the pedestal.

Abstract: A single-substrate-processing apparatus includes an airtight process chamber in which a worktable is supported by a pedestal. The worktable has a mount face on which a plurality of ventilation grooves are formed. A plurality of ventilation holes and three lifter holes for lifter pins are formed vertically through the worktable. The gap space between the wafer and the mount face communicates with the inner space of the process chamber around the worktable and the wafer, through the ventilation grooves, the ventilation holes, and the lifter holes.

Abstract: A single-substrate-processing apparatus includes an airtight process chamber in which a worktable is supported by a pedestal. The worktable has a mount face on which a plurality of ventilation grooves are formed. A plurality of ventilation holes and three lifter holes for lifter pins are formed vertically through the worktable. The gap space between the wafer and the mount face communicates with the inner space of the process chamber around the worktable and the wafer, through the ventilation grooves, the ventilation holes, and the lifter holes.

Abstract: A single-substrate-processing apparatus includes an airtight process chamber, in which a worktable is supported by a pedestal. A conduction structure is arranged to conduct static electricity generated on the worktable and a wafer thereon to a grounded portion outside the process chamber. The conduction structure has a conductive film formed on insulating surfaces of the worktable and the pedestal.