Abstract: There are provided an electrode foil which has all the functions of a supporting base material, an electrode and a reflective layer and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil, wherein the electrode foil has at least one outermost surface which is an ultra-smooth surface having an arithmetic average roughness Ra of 10.0 nm or less as measured in accordance with JIS B 0601-2001.

Abstract: The object of the present invention is to provide a metal layer with an insulating layer which is uniform and thin and can be produced in low cost. To achieve the object, a laminate composed of a ceramic insulating layer and a metal layer characterized in that the ceramic insulating layer has a binder provided among ceramic particles constituting a ceramic particle film formed by electrophoretic deposition of the ceramic particles is employed. The laminate can be suitably used as a base material for production of various types of electronic devices, the circuit formation of printed wiring boards, semiconductor circuits and circuits including semiconductor circuits, and capacitors utilizing dielectric performance of the ceramic insulating layer.

Abstract: An object of the present invention is to provide a method for producing a dielectric film excellent in the deposition stability in forming a high-density dielectric film by an electrophoresis method using a dielectric particle-dispersed slurry in which dielectric particles are dispersed. In order to achieve the object, a method for producing a dielectric film using an electrophoresis method comprising arranging a cathode electrode and an anode electrode in a dielectric particle-dispersed slurry in which the dielectric particles are dispersed and carrying out electrolysis to form a dielectric film on one of the electrodes, wherein the dielectric particles contained in the dielectric particle-dispersed slurry are the calcined dielectric particles.

Abstract: An object of the present invention is to provide a capacitor-forming material having a stable adhesion between a dielectric layer and an electrode-forming layer. To achieve the object, the capacitor-forming material in which an oxides dielectric layer is provided between a top-electrode-forming layer and a bottom-electrode-forming layer, wherein at least one of the top-electrode-forming layer and the bottom-electrode-forming layer has a two-layer construction constituted with a bulk-metal layer and a composite layer composed of metal and metal oxide which is made to contact with the oxides dielectric layer.

Abstract: An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed.

Abstract: In an aerospace vehicle in which a satellite is detachably adapted to the first step rocket and the second step rocket, an electronic device 65 is installed in the satellite 60, wherein the electronic device 65 controls the first step rocket 10 and the second step rocket 20 before the satellite is detached from the first step rocket 10 and the second step rocket 20. Thereby, it is unnecessary to provide sensors, radio devices and electronic devices for exclusive use with respect to the first step rocket 10 and the second step rocket so that a manufacturing cost of the rockets 10 and 20 can be reduced and a total weight of the rockets 10 and 20 can become lighter by omitting these equipments. Thus, an aerospace vehicle system within the rockets 10 and 20 can be simplified and a launch of the aerospace vehicle can be prepared within a short period.

Abstract: The present invention has an object to provide a method for forming an oxide dielectric layer, which dielectric layer is formed by applying the sol-gel method, and is hardly damaged by an etching solution and excellent in dielectric characteristics such as a large electric capacitance. To achieve the object, the forming method of an oxide dielectric layer by applying a sol-gel method characterized by being provided with the following processes (a) to (c) is employed. Process (a): A solution preparing process of preparing a sol-gel solution for manufacturing an aiming oxide dielectric layer. Process (b): A coating process wherein stages of the sol-gel solution coating on the surface of a metal substrate followed by drying in an oxygen-containing atmosphere followed by pyrolysis in an oxygen-containing atmosphere sequentially is made one unit step; the one unit step is repeated twice or more times; and a pre-baking stage at 550-deg.C to 1000-deg.

Abstract: An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed.

Abstract: A capacitor layer forming material that consists of a dielectric film making use of the sol-gel process excelling in production cost merit, being capable of producing a capacitor circuit of prolonged life having a nonconventional high electric capacity. There is provided capacitor layer forming material (1) having dielectric layer (4) interposed between first conductive layer (2) for formation of an upper electrode and second conductive layer (3) for formation of a lower electrode, characterized in that the dielectric layer (4) consists of an oxide dielectric film produced by the sol-gel process containing an oxide crystal structure of 50 to 300 nm grain diameter (major axis) being a coarse crystal structure having grown in the thickness direction and plane direction of the dielectric layer. Further, there is provided a process for efficiently producing this capacitor layer forming material.

Abstract: The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.

Abstract: It is an object of the present invention to provide a capacitor layer forming material which is applicable to printed wiring boards manufactured through a high-temperature processing of 300° C. to 400° C. of a fluorine-contained resin substrate, a liquid crystal polymer and the like, and exhibits no deterioration of the strength after a high-temperature heating. In order to achieve the object, a capacitor layer forming material for a printed wiring board which comprises a first conductive layer used for forming a top electrode, a second conductive layer used for forming a bottom electrode and a dielectric layer between the first and second conductive layers, characterized in that for the second conductive layer, a nickel layer or a nickel alloy layer is employed. The nickel layer or the nickel alloy layer as the second conductive layer preferably has a thickness of 10 micron meter to 100 micron meter.

Abstract: The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.