Abstract: A surface-treated metal material good in heat absorbency and heat releasability is provided. The surface-treated metal material has a heat conductivity of 32 W/(m·K) or higher; and a color difference ?L based on JIS Z8730 of the surface thereof satisfying ?L??40.

Abstract: The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ? (mass %) satisfies the formula 20 (mass %)???60 (mass %), the standard deviation ? (Ni+Co+Si) satisfies the formula ? (Ni+Co+Si)?30 (mass %), and the surface area ratio S (%) satisfies the formula 1%?S?10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 ?m or greater and 1 ?m or less when observed in a cross section parallel to a rolling direction.

Abstract: The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4?[Ni+Co]/Si?about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5?Ni/Co?about 2.

Abstract: The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5 -about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09 -about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4?[Ni+Co]/Si?about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5?Ni/Co?about 2, and wherein Pc is equal to or less than about 15/1000 ?m2, or Pc/P is equal to or less than about 0.

Abstract: The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4?[Ni+Co]/Si?5, and with regard to Cr—Si compound whose size is 0.1 to 5 ?m dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×104/mm2, and not more than 1×106/mm2.

Abstract: An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu—Ni—Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3?Ni/Si?5.5, and the balance being Cu and incidental impurities, wherein particles of Cr—Si compounds having a size of 0.1 ?m to 5 ?m are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×106/mm2.

Abstract: The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ? (mass %) satisfies the formula 20 (mass %)???60 (mass %), the standard deviation ? (Ni+Co+Si) satisfies the formula ? (Ni+Co+Si)?30 (mass %), and the surface area ratio S (%) satisfies the formula 1%?S?10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 ?m or greater and 1 ?m or less when observed in a cross section parallel to a rolling direction.

Abstract: The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4?[Ni+Co]/Si?about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5?Ni/Co?about 2.

Abstract: The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4?[Ni+Co]/Si?about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5?Ni/Co?about 2, and wherein Pc is equal to or less than about 15/1000 ?m2, or Pc/P is equal to or less than about 0.

Abstract: The present invention provides Corson alloy having remarkably improved properties, in particular, by bringing out the effect of added Cr more efficiently. A copper alloy for electronic materials comprising 2.5-4.5% by mass of Ni; 0.50-1.2% by mass of Si; 0.0030-0.2% by mass of Cr; balance Cu and inevitable impurities, wherein the weight ratio of Ni to Si is in the range of 3 to 7 and the content of carbon is 50 ppm by mass or less is provided.

Abstract: Conductors, which are formed on a suspension member of the hard-disc drive suspension, are subject to thermal expansion and shrinkage during the laminating process with a substrate via a polyimide binder. The tracking width of the suspension member is influenced by the thermal expansion and shrinkage. In order to provide a copper-alloy foil, which can attain improved tracking width, the following ratio of thermal expansion and shrinkage is adjusted in a range of from −0.1 to +0.1% &Dgr;(%)=(l−l0)/l0×100 where l0 the length of a specimen before heating at 330° C. for 2 hours, and l is the length of a specimen after heating at 330° C. for 2 hours. &Dgr;(%) is measured in the direction parallel to the rolling direction.

Abstract: The conductors, which are formed on a suspension member of the hard-disc drive suspension is subjected to thermal expansion and shrinkage during the laminating process with a substrate via polyimide binder 3. The tracking width of the suspension member is influenced by the thermal expansion and shrinkage. In order to provide a copper-alloy foil, which can attain improved tracking width, the following ratio of thermal expansion and shrinkage is adjusted in a range of from −0.1 to+0.