Abstract: In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.

Abstract: A substrate treatment apparatus includes: a substrate holding unit; a rotator for rotating the substrate holding unit; a first liquid nozzle for supplying a rinsing liquid; a second liquid nozzle for supplying a low surface tension liquid; a heater ; a lifting mechanism for relatively moving up and down the heater between a contact position allowing the heater to be brought into contact with the lower surface of the substrate and a separation position allowing the heater to be separated from the substrate; a gas nozzle provided in an upper surface of the heater to suck the substrate; a suction pump for sucking an atmosphere above the heater through the gas nozzle; a gas supply source for supplying an inert gas toward above the heater through the gas nozzle; and a controller for selectively performing suction of the atmosphere or supply of the inert gas, through the gas nozzle.

Abstract: A substrate processing method includes a substrate holding step that a substrate is held by a substrate holding unit that holds the substrate horizontally, a sealing step of sealing an internal space of a chamber in a state where the substrate holding unit that holds the substrate is housed in the internal space of the chamber, a liquid film forming step of forming a liquid film of processing liquid, which processes an upper surface of the substrate, by supplying the processing liquid to the upper surface of the substrate which is held horizontally, a pressurizing step of pressurizing the internal space until a pressure of the internal space reaches a first pressure which is higher than an atmospheric pressure, by supplying a gas to the internal space, a heating step of heating the substrate such that a vapor layer of processing liquid is formed between the liquid film and the substrate in a state where the pressure of the internal space reaches the first pressure, and a liquid film excluding step of excludin

Abstract: A substrate processing method includes a substrate holding step of horizontally holding a substrate, a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction, a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally, a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate, a substrate heating step of heating the substrate being in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, exc

Abstract: A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

Abstract: A processing liquid is supplied to an upper surface of a horizontally-held substrate to form a liquid film of the processing liquid that covers an entirety of the substrate upper surface. The substrate is heated to evaporate the processing liquid in contact with the upper surface of the substrate to form a gas phase layer between the upper surface of the substrate and the liquid film of the processing liquid. After the gas phase layer has been formed, a gas is blown onto the liquid film above the substrate to open a hole in the liquid film. The gas is blown onto a region inside the hole in the liquid film to move the liquid film on the gas phase layer. A direction of a gas stream at a substrate outer peripheral portion is changed to remove the liquid film at the substrate outer peripheral portion.

Abstract: A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

Abstract: The method includes holding a substrate horizontally with a holding and rotating mechanism; introducing processing liquid from a fluid introduction portion of, in a processing liquid pipe in which a processing liquid nozzle having a discharge port at a tip end is provided at one end, the other end of the processing liquid pipe into the processing liquid pipe so as to discharge the processing liquid from the discharge port toward the substrate; introducing, after stopping the processing liquid discharge step, a gas from the fluid introduction portion into the processing liquid pipe so as to extrude the processing liquid within the processing liquid pipe and within the processing liquid nozzle outwardly; and stopping, after starting the introduction of the gas, the introduction of the gas into the processing liquid pipe with the processing liquid being left within the processing liquid pipe and/or the processing liquid nozzle.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal orientation by means of a substrate holding unit, a liquid film forming step of supplying a processing liquid to an upper surface of the substrate held by the substrate holding unit to form a liquid film, an upper surface covering step of discharging, above the substrate held by the substrate holding unit, an inert gas radially and parallel to the upper surface of the substrate from a center toward a peripheral edge of the substrate to form an inert gas stream flowing parallel to the upper surface of the substrate and covering the upper surface of the substrate, and a liquid film removing step of discharging an inert gas toward the upper surface of the substrate to remove the liquid film, formed by the liquid film forming step, from the upper surface of the substrate.

Abstract: The method includes holding a substrate horizontally with a holding and rotating mechanism; introducing processing liquid from a fluid introduction portion of, in a processing liquid pipe in which a processing liquid nozzle having a discharge port at a tip end is provided at one end, the other end of the processing liquid pipe into the processing liquid pipe so as to discharge the processing liquid from the discharge port toward the substrate; introducing, after stopping the processing liquid discharge step, a gas from the fluid introduction portion into the processing liquid pipe so as to extrude the processing liquid within the processing liquid pipe and within the processing liquid nozzle outwardly; and stopping, after starting the introduction of the gas, the introduction of the gas into the processing liquid pipe with the processing liquid being left within the processing liquid pipe and/or the processing liquid nozzle.

Abstract: In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.

Abstract: A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.