Abstract: A plasma processing apparatus 1 that performs, on a wafer 16 in which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamber 10 which is disposed inside a vacuum container; a sample stage 14 which is disposed inside the processing chamber and on which the wafer is placed; a detection unit 28 which detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unit 40 which controls plasma processing on the wafer; and an end point determination unit 30 which determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.

Abstract: A plasma processing apparatus 1 that performs, on a wafer 16 in which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamber 10 which is disposed inside a vacuum container; a sample stage 14 which is disposed inside the processing chamber and on which the wafer is placed; a detection unit 28 which detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unit 40 which controls plasma processing on the wafer; and an end point determination unit 30 which determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.