Abstract: A method for producing a composition for forming a non-photosensitive upper layer film that is disposed on a workpiece and a photosensitive resist film, the production method includes cleaning a production device for a composition XA for forming a non-photosensitive upper layer film with a cleaning liquid to clean the production device until a concentration of a resin included in the cleaning liquid reaches 10 ppm by mass or less, discharging the cleaning liquid from the production device, and producing the composition XA for forming a non-photosensitive upper layer film using the production device. The cleaning, the discharging, and the producing are performed in this order.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, in Formula (1), Z represents a halogen atom, a group represented by R11OCH2—, or a group represented by R12OC(?O)CH2—. R11 and R12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Abstract: A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin whose solubility in an aqueous alkali solution increases by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, an ester compound, and a fluorine-containing polymer, in which the ester compound has alkali decomposability and has a molecular weight of 50 or more and less than 1,500.

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is a method for producing an actinic ray-sensitive or radiation-sensitive resin composition including at least a resin having a polarity that increases due to decomposition by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a solvent, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of a compound (I) to (III) below, and the actinic ray-sensitive or radiation-sensitive resin composition is produced by mixing a first solution including the resin having a polarity that increases by the action of an acid and a first solvent with the one or more compounds selected from the group consisting of the compound (I) to (III).

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin A having polarity that increases by an action of an acid; one or more resins B selected from the group consisting of a resin B1 including a fluorine atom and having polarity that increases by the action of an acid, a resin B2 including a fluorine atom and having polarity that increases by the action of an alkali, and a resin B3 including a fluorine atom and having polarity that increases by any of an action of an acid and an action of an alkali; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more selected from the group consisting of a compound (I) to a compound (III), provided that the resin B1 to the resin B3 include no repeating unit including an ion-bonding group.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition, in which the cross-sectional shape of a pattern thus formed has excellent rectangularity and a dimensional variation of the line width of the pattern thus formed hardly occurs even over time after preparation. Furthermore, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases through decomposition by an action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a halogen-based solvent, in which a content of the halogen-based solvent is from 1 ppb by mass to 50 ppm by mass with respect to a total mass of the composition.

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

Abstract: A photosensitive resin composition includes a resin having a constitutional unit having an acid-decomposable group, a photoacid generator, a solvent, and a compound represented by Formula D. In Formula D, XD represents an O atom or an S atom, R1D represents a hydrogen atom, a hydrocarbon group, an acyl group, an acyloxy group, or an alkoxycarbonyl group, R2D represents a substituent, nD represents an integer from 0 to 4, and two or more of R2D's may be bonded to each other to form a ring.

Abstract: A photosensitive resin composition includes a resin, a photoacid generator, a solvent, and a low-molecular-weight ester compound, in which low-molecular-weight ester compound has alkali degradability and has a molecular weight of less than 1,500, and a content of the low-molecular-weight ester compound is from 0.1% by mass to 6% by mass with respect to the total solid content of the composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin whose solubility in an aqueous alkali solution increases by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, an ester compound, and a fluorine-containing polymer, in which the ester compound has alkali decomposability and has a molecular weight of 50 or more and less than 1,500.

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition is an actinic ray-sensitive or radiation-sensitive resin composition including a resin A whose solubility in an alkali developer increases by the action of an acid, a compound B that generates an acid upon irradiation with actinic rays or radiation, a resin C that has a surface energy of more than 25 mJ/m2 and has at least one of a fluorine atom or a silicon atom and a polarity conversion group, and a resin D that has a surface energy of 25 mJ/m2 or less, in which the content of the resin D is 1.1% by mass or more with respect to the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (I), A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, in Formula (I), Z represents a halogen atom, a group represented by R11OCH2—, or a group represented by R12OC(?O)CH2—. R11 and R12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.