Abstract: Detection transistor MNd flows a detection current IdN to a current path CP1n when an output voltage Vo generated in a load terminal PN1 is than a ground voltage GND. A current mirror circuit CMp1 transfers the detection current IdN flowing in the current path CP1n to a current path CP2a. Detecting resistor element Rd1 converts a mirror current I2a flowing in the current path CP2a to a detection voltage Vd1. A control transistor MNc1 is turned on when the converted detection voltage Vd1 is higher than a predetermined value. Then, the output transistor QO is controlled to be off while the control transistor MNc1 is on.

Abstract: Detection transistor MNd flows a detection current IdN to a current path CP1n when an output voltage Vo generated in a load terminal PN1 is than a ground voltage GND. A current mirror circuit CMp1 transfers the detection current IdN flowing in the current path CP1n to a current path CP2a. Detecting resistor element Rd1 converts a mirror current I2a flowing in the current path CP2a to a detection voltage Vd1. A control transistor MNc1 is turned on when the converted detection voltage Vd1 is higher than a predetermined value. Then, the output transistor QO is controlled to be off while the control transistor MNc1 is on.

Abstract: The power control device reliably disconnects the current path of the failed output transistor. In particular, the power control device includes output transistors, an output terminal, bonding wires connecting the output transistors to the output terminal, output transistor driving circuits controlling the output of the output transistors, and a failure detection circuit detecting the failure of the output transistors. When the failure detection circuit detects the failure of the output transistors and outputs the failure detection signals, the output transistor drive circuits control the outputs of the output transistors so that a larger current flows through the bonding wires than when the failure is not detected.

Abstract: A semiconductor device includes an output transistor that supplies a power to a load, a sense transistor that detects a load current of the output transistor, first and second transistors connected in parallel to an output of the sense transistor, an amplifier which has an inverting input coupled to an output of the output transistor, a non-inverting input coupled to the output of the sense transistor, and an output coupled to each gate of the first and second transistors, a first voltage converter coupled to an output of the first transistor, and a comparator that compares an output voltage of the first voltage converter with a predetermined voltage.

Abstract: The power control device reliably disconnects the current path of the failed output transistor. In particular, the power control device includes output transistors, an output terminal, bonding wires connecting the output transistors to the output terminal, output transistor driving circuits controlling the output of the output transistors, and a failure detection circuit detecting the failure of the output transistors. When the failure detection circuit detects the failure of the output transistors and outputs the failure detection signals, the output transistor drive circuits control the outputs of the output transistors so that a larger current flows through the bonding wires than when the failure is not detected.

Abstract: Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

Abstract: Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.