Abstract: A non-volatile semiconductor memory includes memory cell transistors arranged in a matrix, wherein each of the memory cell transistors is a depletion mode MIS transistor.

Abstract: A non-volatile semiconductor memory device has a gate insulating film formed on a semiconductor substrate between isolation regions, a first gate electrode formed on the gate insulating film, an intergate insulating film formed on the first gate electrode, and a second gate electrode formed on the intergate insulating film. The first gate electrode has a first part positioned between isolation insulating films, a second part positioned on the first part and having a partial portion positioned on the isolation region, and a third part positioned on the second part. A width of the third part is set narrower than that of the second part.

Abstract: There is disclosed a semiconductor integrated circuit device including a memory cell array having a plurality of blocks, a first non-volatile semiconductor memory cell which is arranged in the memory cell array and has an electric charge storage layer, and a second non-volatile semiconductor memory cell which is arranged in the memory cell array to be adjacent to the first non-volatile semiconductor memory cell and has an electric charge storage layer. Regular data writing is performed with respect to the second non-volatile semiconductor memory cell after regular data writing is carried out with respect to the first non-volatile semiconductor memory cell. Additional data writing is performed with respect to the first non-volatile semiconductor memory cell after regular data writing is carried out with respect to the second non-volatile semiconductor memory cell.

Abstract: A non-volatile semiconductor memory includes memory cell transistors arranged in a matrix, wherein each of the memory cell transistors is a depletion mode MIS transistor.

Abstract: A semiconductor integrated circuit device has a memory cell array including a plurality of pages and a page buffer. Each of the plurality of pages includes a user region and a page flag region in which page flag data indicative of a current state of a corresponding page is written. The page buffer includes a user page buffer section which temporarily holds the user data and a page flag page buffer section which temporarily holds the page flag data. The page flag data is recorded in the form of two levels in the non-volatile semiconductor memory cell arranged in the page flag region. The user data is recorded in the form of multilevel in the non-volatile semiconductor memory cell arranged in the user region.

Abstract: A nonvolatile semiconductor memory including: a plurality of stripe-shaped active regions extending in a bit line direction; device isolation regions having tops arranged at a location higher than the active regions; a plurality of word lines and select gate lines intersecting with the bit line direction; and memory cell transistors arranged at the intersections of the active regions and the word lines via gate insulator films, including floating gate electrodes formed on the device isolation regions and gate insulator films on the active regions, and isolated on the device isolation regions, control gate electrodes arranged on the floating gate electrodes, and inter-gate insulator films arranged between the control gate electrodes and the floating gate electrodes; wherein, the thickness of the floating gate electrodes on the active regions and a maximum thickness of the floating gate electrodes on the device isolation regions are substantially the same, and steps are provided at the edges of the floating gat

Abstract: There is disclosed a semiconductor integrated circuit device comprising a memory cell array including a plurality of pages and a page buffer. Each of the plurality of pages includes a user region and a page flag region in which page flag data indicative of a current state of a corresponding page is written. The page buffer includes a user page buffer section which temporarily holds the user data and a page flag page buffer section which temporarily holds the page flag data. The page flag data is recorded in the form of two levels in the non-volatile semiconductor memory cell arranged in the page flag region. The user data is recorded in the form of multilevel in the non-volatile semiconductor memory cell arranged in the user region.

Abstract: There is disclosed a semiconductor integrated circuit device including a memory cell array having a plurality of blocks, a first non-volatile semiconductor memory cell which is arranged in the memory cell array and has an electric charge storage layer, and a second non-volatile semiconductor memory cell which is arranged in the memory cell array to be adjacent to the first non-volatile semiconductor memory cell and has an electric charge storage layer. Regular data writing is performed with respect to the second non-volatile semiconductor memory cell after regular data writing is carried out with respect to the first non-volatile semiconductor memory cell. Additional data writing is performed with respect to the first non-volatile semiconductor memory cell after regular data writing is carried out with respect to the second non-volatile semiconductor memory cell.

Abstract: A nonvolatile semiconductor memory includes a plurality of active regions AA extending along the column direction isolated from each other by element isolating regions; a plurality of word lines/control gate lines extending along the row direction perpendicular to the plurality of active regions; and memory cell transistors each having a SOI semiconductor layer, source/drain regions, a tunneling insulating film provided on the SOI semiconductor layer, a floating gate metallic/polysilicon electrode layer sandwiched between the source/drain regions disposed on the tunneling insulating film on the semiconductor layer, an inter-gate insulating film disposed on the floating gate metallic/polysilicon electrode layer, and a control gate metallic electrode layer disposed on the floating gate metallic/polysilicon electrode layer via the inter-gate insulating film.

Abstract: A non-volatile semiconductor memory device has a gate insulating film formed on a semiconductor substrate between isolation regions, a first gate electrode formed on the gate insulating film, an intergate insulating film formed on the first gate electrode, and a second gate electrode formed on the intergate insulating film. The first gate electrode has a first part positioned between isolation insulating films, a second part positioned on the first part and having a partial portion positioned on the isolation region, and a third part positioned on the second part. A width of the third part is set narrower than that of the second part.

Abstract: A non-volatile semiconductor memory includes memory cell transistors arranged in a matrix, wherein each of the memory cell transistors is a depletion mode MIS transistor.

Abstract: A nonvolatile semiconductor memory including: a plurality of stripe-shaped active regions extending in a bit line direction; device isolation regions having tops arranged at a location higher than the active regions; a plurality of word lines and select gate lines intersecting with the bit line direction; and memory cell transistors arranged at the intersections of the active regions and the word lines via gate insulator films, including floating gate electrodes formed on the device isolation regions and gate insulator films on the active regions, and isolated on the device isolation regions, control gate electrodes arranged on the floating gate electrodes, and inter-gate insulator films arranged between the control gate electrodes and the floating gate electrodes; wherein, the thickness of the floating gate electrodes on the active regions and a maximum thickness of the floating gate electrodes on the device isolation regions are substantially the same, and steps are provided at the edges of the floating gat