Patents by Inventor Naohisa Ueno
Naohisa Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9796953Abstract: A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.Type: GrantFiled: October 28, 2015Date of Patent: October 24, 2017Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Tomoya Kumagai, Naohisa Ueno, Mai Sugawara
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Patent number: 9535330Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.Type: GrantFiled: October 30, 2012Date of Patent: January 3, 2017Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yuriko Shirai, Naohisa Ueno, Takuya Ohhashi
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Patent number: 9436094Abstract: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.Type: GrantFiled: September 13, 2013Date of Patent: September 6, 2016Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Naohisa Ueno, Daijiro Mori, Takayuki Haraguchi
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Publication number: 20160122695Abstract: A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.Type: ApplicationFiled: October 28, 2015Publication date: May 5, 2016Inventors: Tomoya KUMAGAI, Naohisa UENO, Mai SUGAWARA
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Patent number: 9291905Abstract: A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27° C. or higher during dilution.Type: GrantFiled: February 19, 2015Date of Patent: March 22, 2016Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Tomoya Kumagai, Naohisa Ueno, Jun Koshiyama
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Publication number: 20150160560Abstract: A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27° C. or higher during dilution.Type: ApplicationFiled: February 19, 2015Publication date: June 11, 2015Inventors: Tomoya Kumagai, Naohisa Ueno, Jun Koshiyama
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Publication number: 20140087313Abstract: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.Type: ApplicationFiled: September 13, 2013Publication date: March 27, 2014Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Naohisa Ueno, Daijiro Mori, Takayuki Haraguchi
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Patent number: 8410296Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.Type: GrantFiled: November 10, 2010Date of Patent: April 2, 2013Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Masaaki Yoshida, Mai Sugawara, Naohisa Ueno, Jun Koshiyama
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Patent number: 8142980Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: GrantFiled: December 4, 2009Date of Patent: March 27, 2012Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Publication number: 20110159447Abstract: Firstly, to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. Secondary, to provide a method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The present invention is firstly a developing solution for photolithography comprising tetrabutylammonium hydroxide (A), and at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3). The present invention is secondary characterized by maintaining the temperature of liquid at 27° C. or higher during dilution.Type: ApplicationFiled: December 16, 2010Publication date: June 30, 2011Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Tomoya KUMAGAI, Naohisa UENO, Jun KOSHIYAMA
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Publication number: 20110118494Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.Type: ApplicationFiled: November 10, 2010Publication date: May 19, 2011Applicant: TOKYO OHKA KOGYO CO., LTDInventors: Masaaki YOSHIDA, Mai SUGAWARA, Naohisa UENO, Jun KOSHIYAMA
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Publication number: 20100086694Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: ApplicationFiled: December 4, 2009Publication date: April 8, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Patent number: 7579138Abstract: The present invention provides a method for forming a micropattern, enabling to narrow intervals between resist patterns, in which the narrowing extent of intervals between resist patterns can be increased while maintaining the controllability of resist pattern dimensions and the good resist pattern shape within a wafer face. The present invention relates a method for forming a micropattern comprising: a coating film formation process for applying a coating composition to form a coating film on a substrate having a resist pattern; a first heating treatment process for heat-treating the coating film; a coating film removal process for removing the coating film after the first heating treatment process; and a second heat treatment process for heat-treating the pattern narrowed after the coating film removal process.Type: GrantFiled: July 19, 2007Date of Patent: August 25, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Naohisa Ueno
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Publication number: 20090126855Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: ApplicationFiled: January 12, 2009Publication date: May 21, 2009Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Publication number: 20080020328Abstract: The present invention provides a method for forming a micropattern, enabling to narrow intervals between resist patterns, in which the narrowing extent of intervals between resist patterns can be increased while maintaining the controllability of resist pattern dimensions and the good resist pattern shape within a wafer face. The present invention relates a method for forming a micropattern comprising: a coating film formation process for applying a coating composition to form a coating film on a substrate having a resist pattern; a first heating treatment process for heat-treating the coating film; a coating film removal process for removing the coating film after the first heating treatment process; and a second heat treatment process for heat-treating the pattern narrowed after the coating film removal process.Type: ApplicationFiled: July 19, 2007Publication date: January 24, 2008Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Naohisa Ueno
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Publication number: 20070213447Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: ApplicationFiled: April 24, 2007Publication date: September 13, 2007Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Publication number: 20050245663Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: ApplicationFiled: April 28, 2005Publication date: November 3, 2005Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno