Patents by Inventor Naohito Suzumura
Naohito Suzumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923296Abstract: An interlayer dielectric layer covers an electric fuse element. A resistance layer made of silicon metal is arranged on the interlayer dielectric layer and directly above the electric fuse element.Type: GrantFiled: June 15, 2022Date of Patent: March 5, 2024Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Naohito Suzumura, Kenichiro Sonoda, Hideaki Tsuchiya
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Publication number: 20230343701Abstract: A semiconductor device includes first and second interlayer insulating films, first and second wirings, and a resistor film. The first wiring is disposed on the first interlayer insulating film. The second interlayer insulating film includes a first layer and a second layer. The first layer is disposed on the first interlayer insulating film so as to cover the first wiring. The resistor film is disposed on the first layer. The resistor film contains at least one selected from the group consisting of silicon chromium, silicon chromium into which carbon is introduced, nickel chromium, titanium nitride and tantalum nitride. The second layer is disposed on the first layer so as to cover the resistor film. The second wiring is disposed on the second layer. The resistor film is closer to the first wiring than to the second wiring in a thickness direction of the second interlayer insulating film.Type: ApplicationFiled: February 27, 2023Publication date: October 26, 2023Inventors: Nobuhito SHIRAISHI, Naohito SUZUMURA
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Publication number: 20230067226Abstract: An electric fuse element has a first portion, a second portion arranged on one end of the first portion, and a third portion arranged on the other end of the first portion. A resistor element is arranged separately from the electric fuse element. A material of each of the electric fuse element and the resistor element has silicon metal or nickel chromium. The electric fuse element and the resistor element are arranged in an upper layer of the first wiring and in lower layer of the second wiring. A wiring width of the second portion and a wiring width of the third portion are larger than a wiring width of the first portion.Type: ApplicationFiled: June 23, 2022Publication date: March 2, 2023Inventors: Naohito SUZUMURA, Hiromichi TAKAOKA, Kenichiro SONODA, Hideaki TSUCHIYA, Yasutaka NAKASHIBA
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Publication number: 20230061976Abstract: An interlayer dielectric layer covers an electric fuse element. A resistance layer made of silicon metal is arranged on the interlayer dielectric layer and directly above the electric fuse element.Type: ApplicationFiled: June 15, 2022Publication date: March 2, 2023Inventors: Naohito SUZUMURA, Kenichiro SONODA, Hideaki TSUCHIYA
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Patent number: 10978394Abstract: In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film.Type: GrantFiled: July 24, 2019Date of Patent: April 13, 2021Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Naohito Suzumura, Kazuyuki Omori
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Publication number: 20200043857Abstract: In the semiconductor device, a first defect formation preventing film is formed on the first wiring side, and a second defect formation preventing film is formed on the second wiring side. when a ratio of an infrared absorption intensity corresponding to a bond between silicon and hydrogen to an infrared absorption intensity corresponding to a bond between silicon and oxygen is defined as an abundance ratio, the abundance ratio in the first defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film. The abundance ratio in the second defect formation preventing film is smaller than the abundance ratio in the second interlayer insulating film.Type: ApplicationFiled: July 24, 2019Publication date: February 6, 2020Inventors: Naohito SUZUMURA, Kazuyuki OMORI
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Patent number: 10438861Abstract: To predict a temperature rise amount due to self-heating of a resistance value of a gate electrode with high accuracy in an HCI accelerated stress test. A gate electrode for gate resistance measurement (for temperature monitoring) that has contacts on its both sides, respectively, is disposed adjacent to the gate electrode. At the time of gate ON of the gate electrode, voltages that are substantially the same voltages as that of the gate electrode and have a minute potential difference between its contacts are applied between the contacts of the gate electrode for gate resistance measurement (for temperature monitoring), and a resistance value of the gate electrode for gate resistance measurement (for temperature monitoring) is measured.Type: GrantFiled: September 29, 2016Date of Patent: October 8, 2019Assignee: Renesas Electronics CorporationInventors: Hideki Aono, Makoto Ogasawara, Naohito Suzumura, Tetsuya Yoshida
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Patent number: 10410946Abstract: A semiconductor device with a FINFET, which provides enhanced reliability. The semiconductor device includes a first N channel FET and a second N channel FET which are coupled in series between a wiring for output of a 2-input NAND circuit and a wiring for a second power potential. In plan view, a local wiring is disposed between a first N gate electrode of the first N channel FET and a second N gate electrode of the second N channel FET which extend in a second direction, and crosses a semiconductor layer extending in a first direction and extends in the second direction. The local wiring is coupled to a wiring for heat dissipation.Type: GrantFiled: January 15, 2018Date of Patent: September 10, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Naohito Suzumura, Hideki Aono
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Publication number: 20180277459Abstract: A semiconductor device with a FINFET, which provides enhanced reliability. The semiconductor device includes a first N channel FET and a second N channel FET which are coupled in series between a wiring for output of a 2-input NAND circuit and a wiring for a second power potential. In plan view, a local wiring is disposed between a first N gate electrode of the first N channel FET and a second N gate electrode of the second N channel FET which extend in a second direction, and crosses a semiconductor layer extending in a first direction and extends in the second direction. The local wiring is coupled to a wiring for heat dissipation.Type: ApplicationFiled: January 15, 2018Publication date: September 27, 2018Inventors: Naohito SUZUMURA, Hideki AONO
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Publication number: 20170092555Abstract: To predict a temperature rise amount due to self-heating of a resistance value of a gate electrode with high accuracy in an HCI accelerated stress test. A gate electrode for gate resistance measurement (for temperature monitoring) that has contacts on its both sides, respectively, is disposed adjacent to the gate electrode. At the time of gate ON of the gate electrode, voltages that are substantially the same voltages as that of the gate electrode and have a minute potential difference between its contacts are applied between the contacts of the gate electrode for gate resistance measurement (for temperature monitoring), and a resistance value of the gate electrode for gate resistance measurement (for temperature monitoring) is measured.Type: ApplicationFiled: September 29, 2016Publication date: March 30, 2017Applicant: Renesas Electronics CorporationInventors: Hideki AONO, Makoto OGASAWARA, Naohito SUZUMURA, Tetsuya YOSHIDA
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Patent number: 9355955Abstract: A semiconductor device is provided in which reliability of the semiconductor device is improved by improving an EM characteristic, a TDDB characteristic, and a withstand voltage characteristic of the semiconductor device. An average diameter of first vacancies in a lower insulating layer which configures an interlayer insulating film of a porous low-k film for embedding a wiring therein, is made smaller than an average diameter of second vacancies in an upper insulating layer, and thereby an elastic modulus is increased in the lower insulating layer. Further, a side wall insulating layer which is a dense layer including the first vacancies having an average diameter smaller than the second vacancies is formed on the surface of the interlayer insulating film exposed on a side wall of a wiring trench.Type: GrantFiled: May 1, 2015Date of Patent: May 31, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Naohito Suzumura, Yoshihiro Oka
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Publication number: 20150235943Abstract: A semiconductor device is provided in which reliability of the semiconductor device is improved by improving an EM characteristic, a TDDB characteristic, and a withstand voltage characteristic of the semiconductor device. An average diameter of first vacancies in a lower insulating layer which configures an interlayer insulating film of a porous low-k film for embedding a wiring therein, is made smaller than an average diameter of second vacancies in an upper insulating layer, and thereby an elastic modulus is increased in the lower insulating layer. Further, a side wall insulating layer which is a dense layer including the first vacancies having an average diameter smaller than the second vacancies is formed on the surface of the interlayer insulating film exposed on a side wall of a wiring trench.Type: ApplicationFiled: May 1, 2015Publication date: August 20, 2015Inventors: Naohito SUZUMURA, Yoshihiro OKA
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Patent number: 9070690Abstract: A semiconductor device is provided in which reliability of the semiconductor device is improved by improving an EM characteristic, a TDDB characteristic, and a withstand voltage characteristic of the semiconductor device. An average diameter of first vacancies in a lower insulating layer which configures an interlayer insulating film of a porous low-k film for embedding a wiring therein, is made smaller than an average diameter of second vacancies in an upper insulating layer, and thereby an elastic modulus is increased in the lower insulating layer. Further, a side wall insulating layer which is a dense layer including the first vacancies having an average diameter smaller than the second vacancies is formed on the surface of the interlayer insulating film exposed on a side wall of a wiring trench.Type: GrantFiled: June 4, 2013Date of Patent: June 30, 2015Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Naohito Suzumura, Yoshihiro Oka
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Patent number: 8778793Abstract: A barrier insulating film is constituted from a first SiCN film formed with a tetramethylsilane gas flow rate lower than usual, a second SiCN film formed over the first SiCN film and formed with a usual tetramethylsilane gas flow rate, and a SiCO film formed over the second SiCN film.Type: GrantFiled: February 9, 2012Date of Patent: July 15, 2014Assignee: Renesas Electronics CorporationInventors: Takahisa Furuhashi, Naohito Suzumura
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Publication number: 20130341793Abstract: To improve reliability of a semiconductor device by improving an EM characteristic, a TDDB characteristic, and a withstand voltage characteristic of the semiconductor device. An average diameter of first vacancies in a lower insulating layer which configures an interlayer insulating film of a porous low-k film for embedding a wiring therein, is made smaller than an average diameter of second vacancies in an upper insulating layer, and thereby an elastic modulus is increased in the lower insulating layer. Further, a side wall insulating layer which is a dense layer including the first vacancies having an average diameter smaller than the second vacancies is formed on the surface of the interlayer insulating film exposed on a side wall of a wiring trench.Type: ApplicationFiled: June 4, 2013Publication date: December 26, 2013Inventors: Naohito SUZUMURA, Yoshihiro OKA
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Patent number: 8492808Abstract: In MRAM, a write wiring clad in a ferromagnetic film has been used to reduce a write current or avoid disturbances. Besides, a CuAl wiring obtained by adding a trace of Al to a Cu wiring has been used widely to secure reliability of a high reliability product. There is a high possibility of MRAM being mounted in high reliability products so that reliability is important. Clad wiring however increases the resistance of the CuAl wiring, which is originally high, so that using both may fail to satisfy the specification of the wiring resistance. In the semiconductor device of the invention having plural copper-embedded wiring layers, copper wiring films of plural copper-embedded clad wirings configuring a memory cell matrix region of MRAM are made of relatively pure copper, while a CuAl wiring film is used as copper wiring films of copper-embedded non-clad wirings below these wiring layers.Type: GrantFiled: July 13, 2011Date of Patent: July 23, 2013Assignee: Renesas Electronics CorporationInventors: Kazuyuki Omori, Kenichi Mori, Naohito Suzumura
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Publication number: 20120289032Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed. Over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11, insulating films 14, 15, 16 are formed. An opening is formed in those insulating films and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 to form the opening. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance. By interposing the insulating film 14 therebetween with a higher density of Si (silicon) atoms than the insulating film 11, an electrically weak interface is prevented from being formed.Type: ApplicationFiled: May 21, 2012Publication date: November 15, 2012Inventors: Takeshi FURUSAWA, Takao KAMOSHIMA, Masatsugu AMISHIRO, Naohito SUZUMURA, Shoichi FUKUI, Masakazu OKADA
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Publication number: 20120228774Abstract: A barrier insulating film is constituted from a first SiCN film formed with a tetramethylsilane gas flow rate lower than usual, a second SiCN film formed over the first SiCN film and formed with a usual tetramethylsilane gas flow rate, and a SiCO film formed over the second SiCN film.Type: ApplicationFiled: February 9, 2012Publication date: September 13, 2012Inventors: Takahisa FURUHASHI, Naohito Suzumura
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Patent number: 8203210Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.Type: GrantFiled: September 15, 2010Date of Patent: June 19, 2012Assignee: Renesas Electronics CorporationInventors: Takeshi Furusawa, Takao Kamoshima, Masatsugu Amishiro, Naohito Suzumura, Shoichi Fukui, Masakazu Okada
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Publication number: 20120043630Abstract: In MRAM, a write wiring clad in a ferromagnetic film has been used to reduce a write current or avoid disturbances. Besides, a CuAl wiring obtained by adding a trace of Al to a Cu wiring has been used widely to secure reliability of a high reliability product. There is a high possibility of MRAM being mounted in high reliability products so that reliability is important. Clad wiring however increases the resistance of the CuAl wiring, which is originally high, so that using both may fail to satisfy the specification of the wiring resistance. In the semiconductor device of the invention having plural copper-embedded wiring layers, copper wiring films of plural copper-embedded clad wirings configuring a memory cell matrix region of MRAM are made of relatively pure copper, while a CuAl wiring film is used as copper wiring films of copper-embedded non-clad wirings below these wiring layers.Type: ApplicationFiled: July 13, 2011Publication date: February 23, 2012Inventors: Kazuyuki OMORI, Kenichi Mori, Naohito Suzumura