Abstract: A resistance element is comprised of a first semiconductor layer of an SOI substrate and a second semiconductor layer formed on the first semiconductor layer. The second semiconductor layer has first and second semiconductor portions spaced apart from each other. The first semiconductor layer has a first region on which the first semiconductor portion is formed, a second region on which the second semiconductor portion is formed, and a third region on which no epitaxial semiconductor layer is formed. Each of the first region and the second region further has a low concentration region located next to the third region. An impurity concentration of the low concentration region is lower than an impurity concentration of the third region. Each semiconductor portion has a middle concentration region located on the low concentration region. An impurity concentration of the middle concentration region is higher than that of the low concentration region.

Abstract: In a motor device having a motor, a reduction mechanism and a housing with an installation leg integrally formed therewith by a pair of dies parting in an axial direction of an output shaft of the reduction mechanism, the installation leg is composed of a side surface coming in surface contact with a frame, a first recess portion for holding a nut whose entire inner surface is opened at least on one side of the housing in a die parting direction of the dies and a second recess portion for inserting a bolt whose entire inner surface is opened on the other side of the housing in the die parting direction of the dies and which extends from the side surface to the first recess portion nearly perpendicularly to the axial direction of the output shaft. By inserting a bolt into the second recess portion through the installation hole of the frame and screwing the bolt into a nut housed in the first recess portion, the housing is fixed to the frame.