Patents by Inventor Naohito Yanagida
Naohito Yanagida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9666799Abstract: An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device.Type: GrantFiled: October 31, 2014Date of Patent: May 30, 2017Assignee: SANDISK TECHNOLOGIES LLCInventors: Naohito Yanagida, Cheng Feng, Michiaki Sano, Akira Nakada, Steven J. Radigan, Eiji Hayashi
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Patent number: 9620712Abstract: An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device.Type: GrantFiled: October 31, 2014Date of Patent: April 11, 2017Assignee: SANDISK TECHNOLOGIES LLCInventors: Eiji Hayashi, Naohito Yanagida, Michiaki Sano, Akira Nakada
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Patent number: 9401309Abstract: Contact openings extending to sacrificial layers located at different depths can be formed by sequentially exposing a greater number of openings in a mask layer by iterative alternation of trimming of a slimming layer over the mask layer and an anisotropic etch that recesses pre-existing contact openings by one level. In one embodiment, pairs of an electrically conductive via contact and electrically conductive electrodes can be simultaneously formed as integrated line and via structures. In another embodiment, encapsulated unfilled cavities can be formed in the contact openings by non-conformal deposition of a material layer, electrically conductive electrodes can be formed by replacement of portions of the sacrificial layers, and the electrically conductive via contacts can be subsequently formed on the electrically conductive electrodes. Electrically conductive via contacts extending to electrically conductive electrodes located at different level can be provided with self-aligned insulating liner.Type: GrantFiled: August 26, 2014Date of Patent: July 26, 2016Assignee: SANDISK TECHNOLOGIES LLCInventors: Keisuke Izumi, Naohito Yanagida, Michiaki Sano, Takehiro Yamazaki, Hiroaki Iuchi, Akio Yanai, Genta Mizuno, Minoru Yamaguchi
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Patent number: 9368601Abstract: A fabrication process for a vertical channel transistor provides a desired control gate-to-drain overlap and sufficient isolation between the control gate and an underlying metal line. A body of the transistor is formed on a metal line, such as in a pillar shape. The metal line is oxidized to form metal oxide regions having an expanded volume. A gate insulator material and a control gate material are then deposited. The resulting structure is etched to form separate control gates for each transistor, and to expose the metal oxide. A further etch is performed to remove the metal oxide, forming voids under and around the control gates. An insulation fills the voids. An example implementation is a vertical bit line memory device in which the transistors connect a vertical bit line to a horizontal bit line.Type: GrantFiled: February 28, 2014Date of Patent: June 14, 2016Assignee: SanDisk Technologies Inc.Inventors: Michiaki Sano, Kensuke Yamaguchi, Akira Nakada, Naohito Yanagida
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Publication number: 20160126455Abstract: An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device.Type: ApplicationFiled: October 31, 2014Publication date: May 5, 2016Inventors: Eiji Hayashi, Naohito Yanagida, Michiaki Sano, Akira Nakada
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Publication number: 20160126292Abstract: An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device.Type: ApplicationFiled: October 31, 2014Publication date: May 5, 2016Inventors: Naohito Yanagida, Cheng Feng, Michiaki Sano, Akira Nakada, Steven J. Radigan, Eiji Hayashi
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Publication number: 20160064281Abstract: Contact openings extending to sacrificial layers located at different depths can be formed by sequentially exposing a greater number of openings in a mask layer by iterative alternation of trimming of a slimming layer over the mask layer and an anisotropic etch that recesses pre-existing contact openings by one level. In one embodiment, pairs of an electrically conductive via contact and electrically conductive electrodes can be simultaneously formed as integrated line and via structures. In another embodiment, encapsulated unfilled cavities can be formed in the contact openings by non-conformal deposition of a material layer, electrically conductive electrodes can be formed by replacement of portions of the sacrificial layers, and the electrically conductive via contacts can be subsequently formed on the electrically conductive electrodes. Electrically conductive via contacts extending to electrically conductive electrodes located at different level can be provided with self-aligned insulating liner.Type: ApplicationFiled: August 26, 2014Publication date: March 3, 2016Inventors: Keisuke Izumi, Naohito Yanagida, Michiaki Sano, Takehiro Yamazaki, Hiroaki Iuchi, Akio Yanai, Genta Mizuno, Minoru Yamaguchi
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Patent number: 9177964Abstract: A method of forming sidewall gates for vertical transistors includes depositing a gate dielectric layer over polysilicon channel structures, and depositing a gate polysilicon layer over the gate dielectric. The gate polysilicon layer is then etched back to form separated gate electrodes. Filler portions are then formed between gate electrodes, which are then etched from the top down while their sides are protected.Type: GrantFiled: December 6, 2013Date of Patent: November 3, 2015Assignee: SanDisk 3D LLCInventors: Akira Nakada, Michiaki Sano, Naohito Yanagida, Teruyuki Mine
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Publication number: 20150249143Abstract: A fabrication process for a vertical channel transistor provides a desired control gate-to-drain overlap and sufficient isolation between the control gate and an underlying metal line. A body of the transistor is formed on a metal line, such as in a pillar shape. The metal line is oxidized to form metal oxide regions having an expanded volume. A gate insulator material and a control gate material are then deposited. The resulting structure is etched to form separate control gates for each transistor, and to expose the metal oxide. A further etch is performed to remove the metal oxide, forming voids under and around the control gates. An insulation fills the voids. An example implementation is a vertical bit line memory device in which the transistors connect a vertical bit line to a horizontal bit line.Type: ApplicationFiled: February 28, 2014Publication date: September 3, 2015Applicant: SanDisk 3D LLCInventors: Michiaki Sano, Kensuke Yamaguchi, Akira Nakada, Naohito Yanagida
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Publication number: 20150162338Abstract: A method of forming sidewall gates for vertical transistors includes depositing a gate dielectric layer over polysilicon channel structures, and depositing a gate polysilicon layer over the gate dielectric. The gate polysilicon layer is then etched back to form separated gate electrodes. Filler portions are then formed between gate electrodes, which are then etched from the top down while their sides are protected.Type: ApplicationFiled: December 6, 2013Publication date: June 11, 2015Applicant: SanDisk 3D LLCInventors: Akira Nakada, Michiaki Sano, Naohito Yanagida, Teruyuki Mine
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Patent number: 8609549Abstract: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.Type: GrantFiled: March 11, 2011Date of Patent: December 17, 2013Assignee: Tokyo Electron LimitedInventors: Sungtae Lee, Masahiro Ogasawara, Junichi Sasaki, Naohito Yanagida
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Publication number: 20110250761Abstract: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.Type: ApplicationFiled: March 11, 2011Publication date: October 13, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Sungtae LEE, Masahiro Ogasawara, Junichi Sasaki, Naohito Yanagida