Patents by Inventor Naohumi Ohashi
Naohumi Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110291280Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: ApplicationFiled: August 10, 2011Publication date: December 1, 2011Inventors: Kazutoshi OHMORI, Tsuyoshi TAMARU, Naohumi OHASHI, Kiyohiko SATO, Hiroyuki MARUYAMA
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Patent number: 8012871Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: GrantFiled: April 30, 2010Date of Patent: September 6, 2011Assignee: Renesas Electronics CorporationInventors: Kazutoshi Ohmori, Tsuyoshi Tamaru, Naohumi Ohashi, Kiyohiko Sato, Hiroyuki Maruyama
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Publication number: 20100210107Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: ApplicationFiled: April 30, 2010Publication date: August 19, 2010Inventors: Kazutoshi Ohmori, Tsuyoshi Tamaru, Naohumi Ohashi, Kiyohiko Sato, Hiroyuki Maruyama
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Patent number: 7723849Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: GrantFiled: December 28, 2006Date of Patent: May 25, 2010Assignee: Renesas Technology Corp.Inventors: Kazutoshi Ohmori, Tsuyoshi Tamaru, Naohumi Ohashi, Kiyohiko Sato, Hiroyuki Maruyama
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Patent number: 7642652Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.Type: GrantFiled: October 15, 2007Date of Patent: January 5, 2010Assignee: Renesas Technology Corp.Inventors: Tatsuyuki Saito, Naohumi Ohashi, Toshinori Imai, Junji Noguchi, Tsuyoshi Tamaru
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Publication number: 20080157219Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.Type: ApplicationFiled: March 12, 2008Publication date: July 3, 2008Inventors: Tsuyoshi FUJIWARA, Masahiro Ushiyama, Katsuhiko Ichinose, Naohumi Ohashi, Tetsuo Saito
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Publication number: 20080132059Abstract: Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the surface of the silicon oxide film and Cu interconnections is treated by a reducing plasma (ammonia plasma). Subsequently, a continuous cap film (silicon nitride film) is formed without vacuum break.Type: ApplicationFiled: April 27, 2007Publication date: June 5, 2008Inventors: Junji Noguchi, Naohumi Ohashi, Tatsuyuki Saito
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Publication number: 20080042282Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.Type: ApplicationFiled: October 15, 2007Publication date: February 21, 2008Inventors: Tatsuyuki SAITO, Naohumi Ohashi, Toshinori Imai, Junji Noguchi, Tsuyoshi Tamaru
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Patent number: 7321171Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.Type: GrantFiled: October 22, 2004Date of Patent: January 22, 2008Assignee: Renesas Technology Corp.Inventors: Tatsuyuki Saito, Naohumi Ohashi, Toshinori Imai, Junji Noguchi, Tsuyoshi Tamaru
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Patent number: 7232757Abstract: Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the surface of the silicon oxide film and Cu interconnections is treated by a reducing plasma (ammonia plasma). Subsequently, a continuous cap film (silicon nitride film) is formed without vacuum break.Type: GrantFiled: March 30, 2004Date of Patent: June 19, 2007Assignee: Renesas Technology Corp.Inventors: Junji Noguchi, Naohumi Ohashi, Tatsuyuki Saito
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Publication number: 20070105369Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: ApplicationFiled: December 28, 2006Publication date: May 10, 2007Inventors: Kazutoshi Ohmori, Tsuyoshi Tamaru, Naohumi Ohashi, Kiyohiko Sato, Hiroyuki Maruyama
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Patent number: 7176121Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: GrantFiled: October 15, 2003Date of Patent: February 13, 2007Assignee: Renesas Technology Corp.Inventors: Kazutoshi Ohmori, Tsuyoshi Tamaru, Naohumi Ohashi, Kiyohiko Sato, Hiroyuki Maruyama
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Publication number: 20070018327Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.Type: ApplicationFiled: September 29, 2006Publication date: January 25, 2007Inventors: Tsuyoshi Fujiwara, Masahiro Ushiyama, Katsuhiko Ichinose, Naohumi Ohashi, Tetsuo Saito
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Patent number: 7163886Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.Type: GrantFiled: August 13, 2004Date of Patent: January 16, 2007Assignees: Hitachi Tokyo Electronics Co., Ltd., Renesas Technology Corp.Inventors: Tsuyoshi Fujiwara, Masahiro Ushiyama, Katsuhiko Ichinose, Naohumi Ohashi, Tetsuo Saito
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Patent number: 7084063Abstract: The copper interconnect formed by the use of a damascene technique is improved in dielectric breakdown strength (reliability). During post-CMP cleaning, alkali cleaning, a deoxidizing process due to hydrogen annealing or the like, and acid cleaning are carried out in this order. After the post-CMP cleaning and before forming an insulation film for a cap film, hydrogen plasma and ammonia plasma processes are carried out on the semiconductor substrate. In this way, a copper-based buried interconnect is formed in an interlayer insulation film structured of an insulation material having a low dielectric constant.Type: GrantFiled: December 23, 2003Date of Patent: August 1, 2006Assignee: Hitachi, Ltd.Inventors: Junji Noguchi, Shoji Asaka, Nobuhiro Konishi, Naohumi Ohashi, Hiroyuki Maruyama
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Publication number: 20050095844Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.Type: ApplicationFiled: October 22, 2004Publication date: May 5, 2005Inventors: Tatsuyuki Saito, Naohumi Ohashi, Toshinori Imai, Junji Noguchi, Tsuyoshi Tamaru
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Publication number: 20050020021Abstract: In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.Type: ApplicationFiled: August 13, 2004Publication date: January 27, 2005Inventors: Tsuyoshi Fujiwara, Masahiro Ushiyama, Katsuhiko Ichinose, Naohumi Ohashi, Tetsuo Saito
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Patent number: 6818546Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.Type: GrantFiled: May 8, 2001Date of Patent: November 16, 2004Assignee: Renesas Technology Corp.Inventors: Tatsuyuki Saito, Naohumi Ohashi, Toshinori Imai, Junji Noguchi, Tsuyoshi Tamaru
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Publication number: 20040192032Abstract: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.Type: ApplicationFiled: October 15, 2003Publication date: September 30, 2004Applicant: Renesas Technology Corp.Inventors: Kazutoshi Ohmori, Tsuyoshi Tamaru, Naohumi Ohashi, Kiyohiko Sato, Hiroyuki Maruyama
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Publication number: 20040180536Abstract: At the end of a film-forming process of an insulator made of a silicon nitride film by a plasma CVD, introduction of the silane system gas is stopped, and thereafter a plasma discharge is performed for a predetermined time while introduction of the nitrogen-containing gas is continued, and then the plasma discharge is stopped. In this manner, it is possible to nitride an unreacted product on the silicon nitride film and to prevent drawbacks due to the unreacted product.Type: ApplicationFiled: December 12, 2003Publication date: September 16, 2004Inventors: Tsuyoshi Fujiwara, Hiroyuki Maruyama, Naohumi Ohashi, Ken Tsugane