Abstract: The object of the present invention is to appropriately constitute such a semiconductor integrated circuit that mounts a plurality of semiconductor chips thereon so as to increase storage capacity. A semiconductor chip, including: a chip enable buffer circuit which outputs a chip enable signal in response to an output command of the chip enable signal; a standard chip enable pad which receives the output command; a first extension pad which supplies a first extension chip enable signal to the chip enable buffer circuit; a second extension pad which supplies a second extension chip enable signal to the chip enable buffer circuit; a first option pad which receives a first option signal; and a second option pad which receives a second option signal, is constituted.

Abstract: The object of the present invention is to appropriately constitute such a semiconductor integrated circuit that mounts a plurality of semiconductor chips thereon so as to increase storage capacity. A semiconductor chip, including: a chip enable buffer circuit which outputs a chip enable signal in response to an output command of the chip enable signal; a standard chip enable pad which receives the output command; a first extension pad which supplies a first extension chip enable signal (/CEm+1) to the chip enable buffer circuit; a second extension pad which supplies a second extension chip enable signal (CEm+1) to the chip enable buffer circuit; a first option pad which receives a first option signal; and a second option pad which receives a second option signal, is constituted.

Abstract: A semiconductor memory device has a reduced number of sense amplifiers to suppress an increase in chip size and power consumption as integration is increased. A semiconductor memory device can be adapted to read out from a memory cell array in pages or bursts can include sense amplifiers (2) for reading out data for a page length or burst length in two parts, including a first half and second half, and a page buffer (3) for storing data for the page length or burst length read out from a memory cell array (1) by the sense amplifier (2).

Abstract: A semiconductor memory device has a reduced number of sense amplifiers to suppress an increase in chip size and power consumption as integration is increased. A semiconductor memory device can be adapted to read out from a memory cell array in pages or bursts can include sense amplifiers (2) for reading out data for a page length or burst length in two parts, including a first half and second half, and a page buffer (3) for storing data for the page length or burst length read out from a memory cell array (1) by the sense amplifier (2).