Abstract: A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.

Abstract: A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.

Abstract: The invention relates to a chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber, exciting the material gas into a state including plasma or radicals, introducing the material gas to a heated substrate, first depositing of diamond on the substrate with the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen, second depositing of diamond on the first deposited diamond with the material gas having a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen or a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 .mu.

Abstract: An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.

Abstract: An improvement in a process for manufacturing a superconductor, characterized by irradiating a material composed of compound oxide by one of ion beams selected from oxygen ion beam, inert gas ion beams and an ion beam consisting of a mixture of oxygen gas and inert gas to convert said material into a superconductor. When a focused ion beam is directed onto desired areas on said film layer, the areas irradiated by the ion beam are converted to a superconductor in a form of a superconducting circuit.

Abstract: A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.

Abstract: A surface acoustic wave device which comprises a diamond or diamond-like carbon layer, a ZnO piezoelectric layer and a comb-like electrode and has a structure having a large surface wave propagation velocity and a large electromechanical coupling factor which are achieved by defining a thickness of the ZnO layer and a mode.

Abstract: Polycrystalline diamond has non-uniform quality along the direction of thickness. The diamond near the rake surface is of better quality. The diamond near the fixation surface is of worse quality. The worse diamond near the fixation surface alleviates a strong stress or absorbs an external shock. Owing to the worse diamond near the fixation surface, the diamond tool excels in chip resistance or toughness. The better diamond near the rake surface heightens abrasion resistance, adhesion resistance and strength.

Abstract: An annular thin plate blade having a cutting edge at its inner periphery and a method of producing the thin plate blade in which an annular member made of polycrystalline diamond formed by vapor phase synthesis is provided at the inner periphery of the thin plate blade and the thin plate blade has a thickness of 20 to 300 .mu.m.

Abstract: Disclosed herein is a method of producing a single crystal of a high-pressure phase material having a pressure region of at least 1000 atm. in an equilibrium state at 25.degree. C. This method is characterized in that a plurality of single-crystalline plates (3, 16) of the high-pressure phase material, as a substrate on which growth is then caused. The plates are so formed that the crystal orientations thereof are substantially equal to each other. The plates are arranged so that single major surface (3a) thereof are substantially flush with each other and so that the crystal orientations thereof are substantially along the same direction to form the substrate (1). The growth takes place out of a vapor-phase whereby a single-crystalline layer (4) of the high-pressure phase material is formed on the substrate (2) by vapor-phase synthesis.

Abstract: Improvement in a superconducting thin film of a superconducting compound oxide containing thallium (Tl) deposited on a substrate, characterized in that the superconducting thin film is deposited by PVD on {110} plane of a single crystal of magnesium oxide (MgO).

Abstract: An X-ray lithography mask comprising a X-ray transparent film made from diamond, X-ray absorber patterns deposited on the X-ray transparent film and diamond crosspieces shaped on the diamond X-ray transparent film for reinforcing the diamond X-ray transparent film. Since both the transparent film and the reinforcing crosspieces are made from diamond, no thermal stress is induced by the change of temperature. The mask excels in transmittance for X-ray, flatness and strength.

Abstract: A process for preparing a superconducting thin film of a compound oxide by a process which is similar to MBE technique. In the present process, a plurality of atom beams or molecular beams each contains one element selected from constituent elements of the compound oxide are directed onto a substrate in a predetermined order, so that a plurality of mono-molecular layers are deposited on the substrate.

Abstract: A thermistor having a temperature detecting part which has a temperature sensing part made of a vapor phase deposited semiconductive diamond film, a metal electrode layer formed on one surface of the semiconductive diamond film, and at least one lead wire connected with the metal electrode layer provided that at least 50% of a total volume of the temperature sensing part and the metal electrode layer is made of the vapor phase deposited diamond.

Abstract: A radiation detecting element comprising a pair of electrode and a semiconductor layer interposed between said pair of electrodes wherein said semiconductor layer comprises a polycrystal diamond having no grain boundary in a direction in which a voltage is applied, and an electric current flows through said semiconductor layer from one electrode to the other without crossing a grain boundary, which element has high sensitivity and a high response speed.

Abstract: A diamond synthesizing apparatus has a reaction tube for internally causing a reaction for vapor-phase synthesizing diamond. A plasma generator produces the required microwave plasma in the reaction tube. The reaction tube is coupled with a gas reservoir, which forms a circulation system with the reaction tube. The circulation system is connectable to an exhaust for evacuating its interior. This circulation system further includes a pump for circulating raw material gas, which is a compound containing carbon. A raw material gas supply is also connectable to the circulation system, for intermittently supplying the raw material gas into the circulation system. During the synthesizing operation the circulation system is completely closed. According to this diamond synthesizing apparatus, it is possible to keep pressure fluctuations and composition fluctuations following a reaction and gas addition, to the minimum and to vapor-phase synthesize diamond in very restricted ranges of gas composition and pressure.

Abstract: Disclosed is a method of vapor-phase synthesizing diamond comprising creating a reduction atmosphere by burning a combustible gas in a combustion-supporting gas, controlling the humidity by adding steam or liquid water drops to the combustion flame, and inserting a basic material into the synthesis flame. This method produces diamonds of the desired reproducibility and crystallinity, with an industrially-acceptable rate of film growth, while simultaneously ensuring the process stability necessary for long-duration synthesis.

Abstract: This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.

Abstract: In a process for depositing a superconducting thin film of bismuth-containing compound oxide on a substrate by physical vapor deposition, the improvement wherein the substrate is heated at a temperature between 670.degree. and 750.degree. C. during the deposition.

Abstract: Improvement in a method for producing superconductors of thallium (T1) type compound oxides by sintering a material powder mixture including at least one thallium-containing powder, the method including wrapping the material powder mixture in a foil of precious metals or their alloys and placing the wrapped material powder in a pipe of precious metals or their alloys and having an opening, wherein the material powder mixture wrapped in the foil is sintered in the pipe while oxygen gas is supplied into the pipe through the opening.