Patents by Inventor Naokatsu Sano
Naokatsu Sano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120175639Abstract: It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta2O5, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.Type: ApplicationFiled: March 16, 2012Publication date: July 12, 2012Applicant: THE NEW INDUSTRY RESEARCH ORGANIZATIONInventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
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Patent number: 8211244Abstract: The present invention relates to a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide, where the tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta2O5, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.Type: GrantFiled: May 17, 2010Date of Patent: July 3, 2012Assignee: Toyo Tanso Co., Ltd.Inventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
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Patent number: 8110322Abstract: The invention provides a method for forming a selective mask on a surface of a layer of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z (0?X?1, 0?Y?1, 0?Z?1), which is a method for forming a mask with a minute width suitable for microfabrication in nano-order. (1) An energy beam 4a, 4b is selectively irradiated onto a natural oxide layer 2 formed on the surface of the layer 1 of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z. (2) Of the natural oxide layer 2, parts other than parts onto which the energy beam 4a, 4b has been irradiated is removed by heating. (3) The natural oxide layer 2 of the parts onto which the energy beam 4a, 4b has been irradiated is partially removed by heating while alternatively carrying out a rise and fall in heating temperature.Type: GrantFiled: April 25, 2005Date of Patent: February 7, 2012Assignee: RiberInventors: Naokatsu Sano, Tadaaki Kaneko
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Publication number: 20100284895Abstract: It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta2O5, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.Type: ApplicationFiled: May 17, 2010Publication date: November 11, 2010Applicant: TOYO TANSO CO., LTD.Inventors: Tadaaki KANEKO, Yasushi Asaoka, Naokatsu Sano
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Publication number: 20100143828Abstract: The invention provides a method for forming a selective mask on a surface of a layer of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z (0?X?1, 0?Y?1, 0?Z?1), which is a method for forming a mask with a minute width suitable for microfabrication in nano-order. (1) An energy beam 4a, 4b is selectively irradiated onto a natural oxide layer 2 formed on the surface of the layer 1 of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z. (2) Of the natural oxide layer 2, parts other than parts onto which the energy beam 4a, 4b has been irradiated is removed by heating. (3) The natural oxide layer 2 of the parts onto which the energy beam 4a, 4b has been irradiated is partially removed by heating while alternatively carrying out a rise and fall in heating temperature.Type: ApplicationFiled: April 25, 2005Publication date: June 10, 2010Inventors: Naokatsu Sano, Tadaaki Kaneko
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Patent number: 7704861Abstract: Onto a surface of an AlxGayIn1-x-yAszP1-z (0?x, y, z?1) layer including GaAs alone or an InP substrate, an electron beam controlled to an arbitrary electron beam diameter and current density is irradiated so as to selectively substitute or generate Ga2O3 for a natural oxide layer formed on the AlxGayIn1-x-yAszP1-z, layer surface, then the AlxGayIn1-x-yAszP1-z layer surface is dry-etched by a bromide in single atomic layer units, whereby the natural oxide layer other than the part substituted by the Ga2O3 and AlxGayIn1-x-yAszP1-z substrate are removed.Type: GrantFiled: May 25, 2004Date of Patent: April 27, 2010Assignee: Riber SAInventors: Tadaaki Kaneko, Kiyoshi Sakaue, Naokatsu Sano
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Patent number: 7637998Abstract: Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.Type: GrantFiled: October 14, 2008Date of Patent: December 29, 2009Assignee: Kwansei Gakuin Educational FoundationInventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
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Patent number: 7527869Abstract: The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.Type: GrantFiled: June 4, 2001Date of Patent: May 5, 2009Assignee: Kwansei Gakuin Educational FoundationInventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
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Publication number: 20090038538Abstract: Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm2 or less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.Type: ApplicationFiled: October 14, 2008Publication date: February 12, 2009Applicant: THE NEW INDUSTRY RESEARCH ORGANIZATIONInventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
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Patent number: 7432176Abstract: Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z (0?x<1, 0?y and z?1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga2O3 substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga2O3 substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.Type: GrantFiled: April 13, 2004Date of Patent: October 7, 2008Assignee: RiberInventors: Tadaaki Kaneko, Naokatsu Sano, Kiyoshi Sakaue
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Publication number: 20070232029Abstract: Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z (0?x<1, 0?y and z?1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga2O3 substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga2O3 substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.Type: ApplicationFiled: April 13, 2004Publication date: October 4, 2007Inventors: Tadaaki Kaneko, Naokatsu Sano, Kiyoshi Sakaue
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Publication number: 20070059501Abstract: It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta205, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.Type: ApplicationFiled: July 30, 2004Publication date: March 15, 2007Applicant: THE NEW INDUSTRY RESEARCH ORGANIZATIONInventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
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Publication number: 20040237879Abstract: The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.Type: ApplicationFiled: June 30, 2004Publication date: December 2, 2004Inventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano