Abstract: The present invention according to one preferred embodiment provides a thermoelectric element device comprising a first electrode including an electrode member, an elastic member that has electrically conductive and is provided on the electrode member, and a heat uniforming member that has electrically conductive and is provided on the elastic member; a thermoelectric element that is made of a thermoelectric material having thermoelectric effect and arranged on the first electrode so as to contact the heat uniforming member; and a second electrode arranged on the thermoelectric element.

Abstract: There is provided a thermoelectric device capable of improving a power generation performance while keeping a hermetic sealing after a heat cycle is applied, and also achieving simplification of a structure and improvement in productivity and reliability of a device by reducing the number of articles, and a method of manufacturing the same. A thermoelectric device, includes a metal substrate 2, a thermoelectric element 3 mounted on a center portion of a surface of the metal substrate 2, a metal lid 4 for covering an upper surface and side surfaces of the thermoelectric element 3, and a joining metal member 5 provided to a peripheral portion of a surface of the metal substrate 2 to hermetically seal a space between the metal substrate 2 and the lid 4.

Abstract: The thermoelectric material is represented by the following composition formula of (Tia1Zrb1Hfc1)xAyB100-x-y, in which element A is at least one element selected from the group consisting of Ni and Co, element B is at least one element selected from the group consisting of Sn and Sb, 0?a1?1, 0?b1?1, 0?c1?1, and a1+b1+c1=1 hold, and 30?x?35 and 30?y?35 hold, and the thermoelectric material comprises a phase having an MgAgAs type crystal structure as a major phase. In this thermoelectric material, the density of the thermoelectric material is more than 99.0% of the true density. When this thermoelectric material is used for either one or both of p-type elements and n-type elements, a thermoelectric conversion device having high thermoelectric conversion performance is realized.

Abstract: The present invention according to one preferred embodiment provides a thermoelectric element device comprising a first electrode including an electrode member, an elastic member that has electrically conductive and is provided on the electrode member, and a heat uniforming member that has electrically conductive and is provided on the elastic member; a thermoelectric element that is made of a thermoelectric material having thermoelectric effect and arranged on the first electrode so as to contact the heat uniforming member; and a second electrode arranged on the thermoelectric element

Abstract: There is provided a thermoelectric device capable of improving a power generation performance while keeping a hermetic sealing after a heat cycle is applied, and also achieving simplification of a structure and improvement in productivity and reliability of a device by reducing the number of articles, and a method of manufacturing the same. A thermoelectric device, includes a metal substrate 2, a thermoelectric element 3 mounted on a center portion of a surface of the metal substrate 2, a metal lid 4 for covering an upper surface and side surfaces of the thermoelectric element 3, and a joining metal member 5 provided to a peripheral portion of a surface of the metal substrate 2 to hermetically seal a space between the metal substrate 2 and the lid 4.

Abstract: A thermoelectric direct conversion device is foemed of a plurality of thermoelectric direct conversion semiconductor pairs each including a p-type semiconductor and an n-type semiconductor; a plurality of high-temperature electrodes and a plurality of low-temperature electrodes each electrically connecting the p-type semiconductor and the n-type semiconductor; a high-temperature insulating plate and a low-temperature insulating plate each thermally connected to the plurality of thermoelectric direct conversion semiconductor pairs via the plurality of high-temperature electrodes and the plurality of low-temperature electrodes, respectively; at least one diffusion barrier layer is disposed between the high- or low-temperature electrodes and the thermoelectric direct conversion semiconductor pairs, and the entire device is hermetically sealed up within an airtight case containing a vacuum or inert gas atmosphere, whereby diffusion between the electrodes and the semiconductor pairs is prevented to provide a therm