Abstract: An apparatus includes: a semiconductor substrate having a first region, a second region and a third region; a first wiring above the first region of the semiconductor substrate; a second wiring above the second region of the semiconductor substrate; a third wiring above the third region of the semiconductor substrate; and a first insulating film on each of the first, second and third wirings. A height of an upper surface of the first wiring is lower than a height of an upper surface of the second wiring; wherein the height of an upper surface of the second wiring is lower than a height of an upper surface of the third wiring Each of portions of the first insulating film disposed above the first, second and third wirings has an equal film thickness.

Abstract: Apparatuses and methods for controlling hydrogen diffusion to a substrate in manufacturing memory devices are described. An example apparatus includes: a substrate; an active region in the substrate; at least one first conductive material above the active region; a hydrogen source layer on the at least one first conductive material, the hydrogen source layer including hydrogen atoms and/or molecules and the hydrogen source layer configured to release the hydrogen atoms and/or molecules; a hydrogen diffusion barrier layer on the conductive layer; and at least one second conductive material above the hydrogen diffusion barrier layer, the at least one second conductive material coupled to the at least one first conductive material. The at least one first conductive material has hydrogen diffusion properties. The hydrogen diffusion barrier layer has hydrogen barrier properties.

Abstract: Apparatuses and methods for controlling hydrogen diffusion to a substrate in manufacturing memory devices are described. An example apparatus includes: a substrate; an active region in the substrate; at least one first conductive material above the active region; a hydrogen source layer on the at least one first conductive material, the hydrogen source layer including hydrogen atoms and/or molecules and the hydrogen source layer configured to release the hydrogen atoms and/or molecules; a hydrogen diffusion barrier layer on the conductive layer; and at least one second conductive material above the hydrogen diffusion barrier layer, the at least one second conductive material coupled to the at least one first conductive material. The at least one first conductive material has hydrogen diffusion properties. The hydrogen diffusion barrier layer has hydrogen barrier properties.