Abstract: A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

Abstract: A valve device may include: a shaft which has a shaft central axis; a stationary disk; a rotor; a housing which has a housing central axis and an opening; a housing cover which closes the opening; and a seal member. The seal member is eccentric with respect to the shaft central axis in conformity with the amount of eccentricity between the shaft central axis and the housing central axis. A valve device may include: a drive device; a shaft which has a shaft central axis; a stationary disk; a rotor; a housing which has a housing central axis and an opening; a drive device case which closes the opening and receives the drive device; and a seal member. The seal member is eccentric with respect to the shaft central axis in conformity with the amount of eccentricity between the shaft central axis and the housing central axis.

Abstract: A valve device includes a housing, a stationary valve and a drive valve. The stationary valve is placed in a fluid passage of the housing. The stationary valve forms a first passage, which conducts fluid, and a penetrating chamber which penetrates through the stationary valve in the axial direction. The drive valve is placed on one axial side of the stationary valve in the fluid passage and forms a second passage which conducts the fluid. The drive valve communicates the second passage to the first passage through rotation of the drive valve. The housing has a bottom portion that covers the penetrating chamber from another axial side. An upstream passage of the fluid passage, which is located on an upstream side of the drive valve and the stationary valve in a flow direction of the fluid, is communicated with the penetrating chamber through a communication passage.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.

Abstract: One embodiment relates to an organic electronic material containing a charge transport polymer, wherein the charge transport polymer is a polymer which, when 25 ?L portions of methanol are added dropwise and stirred into 1,000 ?L of a solution containing the charge transport polymer and toluene in a ratio of 20 mg of the charge transport polymer per 2,290 ?L of toluene, the amount of methanol added by the time cloudiness develops in the solution is greater than 350 ?L.

Abstract: A charge transport material containing a charge transport polymer that satisfies at least one of (I) or (II) described below: (I) to independently have both a monovalent substituent having an alicyclic structure of 7 or more carbon atoms, and a monovalent substituent having a carbonyl-containing group; and (II) to have a monovalent substituent that includes a monovalent substituent having an alicyclic structure of 7 or more carbon atoms bonded directly to a carbonyl-containing group.

Abstract: An organic electronic material containing a charge transport compound having a structural region represented by formula (I) and having a weight average molecular weight greater than 40,000. —Ar—X—Y—Z??(I) In the formula, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, X represents a linking group, Y represents an aliphatic hydrocarbon group of 1 to 10 carbon atoms, and Z represents a substituted or unsubstituted polymerizable functional group.

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

Abstract: A charge transport polymer containing a structural unit having an N-aryl phenoxazine skeleton is produced, and is used as a charge transport material.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first gate insulating film, a second gate insulating film, and a gate electrode. The semiconductor layer is provided in a selective region of the substrate. The first gate insulating film is provided in the selective region of the substrate and covers a surface of the semiconductor layer. The second gate insulating film extends across opposite sides of the first gate insulating film along a channel width direction and covers the first gate insulating film that covers the semiconductor layer. The gate electrode faces the semiconductor layer across the second gate insulating film.

Abstract: An organic electronic material containing a charge transport polymer for which, in a molecular weight distribution chart measured by GPC, the area ratio accounted for by components having a molecular weight of less than 20,000 is not more than 40%, and the area ratio accounted for by components having a molecular weight of 500 or less is not more than 1%.

Abstract: One embodiment relates to an organic electronic material containing a charge transport polymer or oligomer, wherein the charge transport polymer or oligomer has a structural unit containing an aromatic amine structure substituted with a fluorine atom.

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.

Abstract: An embodiment of the present invention relates to a treatment liquid which contains an ionic compound and a solvent, and is used for adhering the ionic compound to at least one surface selected from the group consisting of a surface on which a layer having hole transport properties is to be formed, and a surface of a layer having hole transport properties.