Abstract: To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.

Abstract: There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell (10), the memory including: first and second tunnel junction elements (100a, 100b) each having a laminated structure including a reference layer (202) with a fixed magnetization direction, a recording layer (206) with a reversible magnetization direction, and an insulating layer (204) sandwiched between the reference layer and the recording layer; a first selection transistor (300) electrically connected to first ends of the first and second tunnel junction elements; a first wire (400a) electrically connected to a second end of the first tunnel junction element; and a second wire (400b) electrically connected to a second end of the second tunnel junction element.

Abstract: To provide a magnetic memory for storing multi-level information capable of reading while sufficiently securing a read margin. Provided is a magnetic memory including: first and second magnetic storage elements that are provided between a first wiring and a second wiring crossing each other, and are electrically connected in series; a third wiring electrically connected between the first and second magnetic storage elements; a first determination unit that determines a magnetization state of the first magnetic storage element on the basis of a current flowing to the first magnetic storage element through the third wiring; and a second determination unit that determines a magnetization state of the second magnetic storage element on the basis of a current flowing to the first and second magnetic storage elements through the first wiring, in which the determination state of the second determination unit is changed on the basis of the determination result of the first determination unit.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.

Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.

Abstract: According to one embodiment, a magnetoresistive effect element includes: a nonmagnetic layer; a stacked structure body; and a detection layer. The stacked structure body is provided on the nonmagnetic layer. The stacked structure body includes: a reference layer; an oscillation layer; and an intermediate layer. The reference layer is provided on the nonmagnetic layer. A magnetization of the reference layer is fixed. The oscillation layer is provided on the reference layer. A magnetization of the oscillation layer is substantially parallel to the magnetization of the reference layer and is variable. The intermediate layer is provided between the reference layer and the oscillation layer. The detection layer is provided on the nonmagnetic layer apart from the stacked structure body.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1?x(65 at %?x?85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

Abstract: A magnetic head includes a main magnetic pole, a trailing shield that forms a magnetic circuit with the main magnetic pole, a spin torque oscillator that is provided between the main magnetic pole and the trailing shield, a first cooling layer that partially has a Heusler structure, and a second cooling layer that is provided on the first cooling layer and mainly comprised of silver. The first cooling layer and the second cooling layer are provided either between the main magnetic pole and spin torque oscillator or between the trailing shield and the spin torque oscillator, with either of the two cooling layers being disposed closer to the spin torque oscillator. A third cooling layer may be formed to be in contact with the first cooling layer.

Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %?x?60 at %, 0.3?y?0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.

Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %?x?60 at %, 0.3?y?0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.