Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.

Abstract: Provided is an information processing system including a reflection member, a hand-held information processing apparatus including an imaging section, and an information processing apparatus communicable with the hand-held information processing apparatus. The reflection member is a retroreflecting material. The hand-held information processing apparatus includes the imaging section and a light emitting section. The hand-held information processing apparatus analyzes a captured image, calculates the position of an image of the retroreflecting material corresponding to reflected light from the retroreflecting material, and outputs positional information thereof. The information processing apparatus estimates the orientation or position of the hand-held information processing apparatus on the basis of the positional information, and generates an image based on the result of the estimation.

Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.

Abstract: An information processing apparatus to which an input apparatus is connected through a wire or wirelessly is provided. The information processing apparatus includes a memory and a processor coupled to the memory. The processor executes an application program in accordance with an operation by a user accepted by the input apparatus, obtains update data for firmware of the input apparatus from a server through a network, and performs processing for updating the firmware of the input apparatus in response to a request from the application program while the application program is being executed. The processor suspends execution of the application program before update of the firmware and resumes execution of the application program in response to completion of update of the firmware.

Abstract: An attachment configured to be attached to a game controller with a camera is provided. The attachment includes a housing having a support portion which supports the game controller and an operation portion in the housing. The support portion supports the game controller such that a direction of shooting of the camera is oriented to the inside of the housing and supports the game controller such that a field of view of shooting with the camera includes a first region including a first indication in the housing as a subject and a second region including a second indication in the housing as a subject. The first indication is located such that a position thereof is maintained regardless of an operation onto the operation portion, and the second indication is located such that a position thereof is variable in accordance with an operation onto the operation portion.

Abstract: An information processing apparatus to which an input apparatus is connected through a wire or wirelessly is provided. The information processing apparatus includes a memory and a processor coupled to the memory. The processor executes an application program in accordance with an operation by a user accepted by the input apparatus, obtains update data for firmware of the input apparatus from a server through a network, and performs processing for updating the firmware of the input apparatus in response to a request from the application program while the application program is being executed. The processor suspends execution of the application program before update of the firmware and resumes execution of the application program in response to completion of update of the firmware.

Abstract: An attachment configured to be attached to a game controller with a camera is provided. The attachment includes a housing and an operation portion in the housing. The housing includes a support portion which supports the game controller such that a direction of shooting of the camera is oriented to the inside of the housing. The operation portion has a movable portion in the housing, a position of the movable portion being changed in accordance with a pressing operation onto the operation portion, and at least one of a shape of and a pattern on the movable portion viewed from the camera being changed in accordance with a rotation operation onto the operation portion.

Abstract: An attachment configured to be attached to a game controller with a camera is provided. The attachment includes a housing having a support portion which supports the game controller and an operation portion in the housing. The support portion supports the game controller such that a direction of shooting of the camera is oriented to the inside of the housing and supports the game controller such that a field of view of shooting with the camera includes a first region including a first indication in the housing as a subject and a second region including a second indication in the housing as a subject. The first indication is located such that a position thereof is maintained regardless of an operation onto the operation portion, and the second indication is located such that a position thereof is variable in accordance with an operation onto the operation portion.

Abstract: An attachment configured to be attached to a game controller with a camera is provided. The attachment includes a housing and an operation portion in the housing. The housing includes a support portion which supports the game controller such that a direction of shooting of the camera is oriented to the inside of the housing. The operation portion has a movable portion in the housing, a position of the movable portion being changed in accordance with a pressing operation onto the operation portion, and at least one of a shape of and a pattern on the movable portion viewed from the camera being changed in accordance with a rotation operation onto the operation portion.

Abstract: A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Abstract: A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

Abstract: Provided is an information processing system including a reflection member, a hand-held information processing apparatus including an imaging section, and an information processing apparatus communicable with the hand-held information processing apparatus. The reflection member is a retroreflecting material. The hand-held information processing apparatus includes the imaging section and a light emitting section. The hand-held information processing apparatus analyzes a captured image, calculates the position of an image of the retroreflecting material corresponding to reflected light from the retroreflecting material, and outputs positional information thereof. The information processing apparatus estimates the orientation or position of the hand-held information processing apparatus on the basis of the positional information, and generates an image based on the result of the estimation.

Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Abstract: A cathode material for Li ion secondary batteries has high output and high energy density with excellent electron conductivity and Li ion conductivity. The cathode material contains an electrode active material base containing Li, which is capable of electrode oxidation/reduction accompanied by desorption and absorption of Li ions in a potential range of 4 V or more and 5 V or less based on a metal Li negative electrode and has a reversible charge/discharge capacity accompanying the electrode oxidation/reduction in the potential range described above of 30 mAh or more per 1 g. Surfaces of primary particles of an electrode active material base are coated with a layer containing a conductive polymer and a negative ion that enables the conductive polymer to produce electron conductivity equal to or higher than the electron conductivity of the electrode active material itself.

Abstract: An electrode material is composed of an electrode active material represented by the general formula LiMPO4, where M=[FetMn1-t], and t is a number between 0 inclusive and 1 inclusive. Each of the primary particles of the electrode active material has a layer on its surface, said layer having a Li ion conductive substance including Li, one or both of Fe and Mn, P and O, and conductive carbon C. Minute secondary particles are formed from a plurality of the primary particles that aggregate, and bind to each other via the layer comprising the Li ion conductive substance and the conductive carbon C. The electrode material has an area-equivalent diameter of 45 nm or more determined by a specific surface area obtained from the nitrogen adsorption Brunauer, Emmett and Teller (BET) multipoint method.

Abstract: There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.

Abstract: An electrode material for a secondary battery includes crystal primary particles of an electrode active material which releases or absorbs cations of a monovalent or divalent metal when subjected to electrochemical oxidation or reduction and which has a crystal lattice in which the cations can move only in a one-dimensional movable direction during the process of oxidation or reduction. The electrode material also includes an ion-conductive substance and conductive carbon which coexist on the surface of the primary particles, in which the ion-conductive substance has a property which allows two or three-dimensional movement of the cations, and the cations are movable via a layer in which the ion-conductive substance and the conductive carbon coexist.

Abstract: There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.

Abstract: To provide a silicon carbide substrate having at least one or more main surfaces, including: a plurality of encapsulated regions inside, wherein the plurality of encapsulated regions are distributed in a direction approximately parallel to one of the main surfaces, with each encapsulated region positioned at a distance of 100 nm or more and 100 ?m or less from the main surfaces to inside a substrate, and each encapsulated region having a width of 100 nm or more and 100 ?m or less in a direction parallel to the main surfaces.